1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge

Ranran Fan; Fei Lu; Kaikai Li

doi:10.1364/PRJ.5.000567

Journals >Photonics Research >Volume 5 >Issue 6 >Page 567 > Article

Photonics Research
Vol. 5, Issue 6, 567 (2017)

1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge

Ranran Fan, Fei Lu^*, and Kaikai Li

Author Affiliations

School of Information Science and Engineering, Shandong University, Jinan 250100, China

show less

DOI: 10.1364/PRJ.5.000567 Cite this Article Set citation alerts

Ranran Fan, Fei Lu, Kaikai Li. 1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge[J]. Photonics Research, 2017, 5(6): 567 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Feb. 24, 2023

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.