Ranran Fan, Fei Lu, Kaikai Li, "1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge," Photonics Res. 5, 567 (2017)

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- Photonics Research
- Vol. 5, Issue 6, 567 (2017)

Fig. 1. (a) Cross-section HRTEM image of well-grown nc-Ge 5 nm in size in 600°C annealed Ge:Er:ZnO (Er ∼ 0.6 at. %) films. (b) HAADF image of the above film.

Fig. 2. Visible PL spectra of as-deposited, 600°C annealed Ge:Er:ZnO and 600°C annealed Er:ZnO films (all with Er ∼ 0.6 at. %).

Fig. 3. 1.54 μm PL spectra of the as-deposited, 600°C annealed Ge:Er:ZnO and Er:ZnO films (all with Er ∼ 0.6 at. %) under different excitation wavelengths. The arrows denoted in the diagram indicate each corresponding transition level to the ground state in Er 3 + ions. The inset in (a) shows the energy diagram of Er 3 + ions.

Fig. 4. (a) PLE spectra observed at 1.54 μm for 600°C annealed Ge:Er:ZnO and Er:ZnO (all with Er ∼ 0.6 at. %) films. Arrows in the diagram indicate the different excitation ways of Er 3 + ions. (b) Visible and NIR PL spectra of 600°C annealed Ge:Er:ZnO films containing nc-Ge with different Er concentrations (0.6 at. % and 0.3 at. %).

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