• Journal of Semiconductors
  • Vol. 43, Issue 6, 062802 (2022)
Yitian Bao1, Xiaorui Wang1, and Shijie Xu1、2
Author Affiliations
  • 1Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
  • 2Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200438, China
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    DOI: 10.1088/1674-4926/43/6/062802 Cite this Article
    Yitian Bao, Xiaorui Wang, Shijie Xu. Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films[J]. Journal of Semiconductors, 2022, 43(6): 062802 Copy Citation Text show less
    (Color online) The experimental (solid squares) and calculated (solid line) refractive indexes of β-Ga2O3 thin film as a function of photon energy. The experimental data were from Ref. [17], while the solid line was fitted with Eq. (1).
    Fig. 1. (Color online) The experimental (solid squares) and calculated (solid line) refractive indexes of β-Ga2O3 thin film as a function of photon energy. The experimental data were from Ref. [17], while the solid line was fitted with Eq. (1).
    (Color online) The measured transmission spectra (solid squares) and corresponding fitting curves (red solid lines) of the β-Ga2O3 thin films. The experimental spectra were measured by Hu et al.[4], while the fitting curves were obtained with Eq. (2) described in the text.
    Fig. 2. (Color online) The measured transmission spectra (solid squares) and corresponding fitting curves (red solid lines) of the β-Ga2O3 thin films. The experimental spectra were measured by Hu et al.[4], while the fitting curves were obtained with Eq. (2) described in the text.
    (Color online) Measured (open circles) and calculated (solid lines) sub-bandgap absorption coefficients of β-Ga2O3 thin film with an impurity density of 2.52 × 1024 m–3. Note that the plot is drawn in a semi-logarithmic scale. The original experimental data was from Ref. [29].
    Fig. 3. (Color online) Measured (open circles) and calculated (solid lines) sub-bandgap absorption coefficients of β-Ga2O3 thin film with an impurity density of 2.52 × 1024 m–3. Note that the plot is drawn in a semi-logarithmic scale. The original experimental data was from Ref. [29].
    Sampleabcdefg
    Effective bandgap (eV)4.9524.9234.9204.9184.8654.8234.770
    Flow rates of SiH4 (sccm) 0.000.020.040.080.120.160.20
    Table 1. Determined effective optical bandgap values vs. flow rates of SiH4.
    Yitian Bao, Xiaorui Wang, Shijie Xu. Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films[J]. Journal of Semiconductors, 2022, 43(6): 062802
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