M. Akura, G. Dunn, M. Missous. Hot electron effects on the operation of potential well barrier diodes[J]. Journal of Semiconductors, 2019, 40(12): 122101
- Journal of Semiconductors
- Vol. 40, Issue 12, 122101 (2019)
Fig. 1. The epitaxial structure of the potential well barrier diode showing all the design parameters.
Fig. 2. Comparison of the experimental results (diamond), the drift-diffusion (broken line) and Monte Carlo (solid line) simulation models. Result shows that the MC model has better agreement with the experimental results than the DD model lower bias (a) linear (b) logarithmic plots.
Fig. 3. Behaviour of effective (including the band offset) electric field for various operating bias across the diode.
Fig. 4. Effect of varying electric field on the population of electron across the diode. The result shows that there are more electrons in the diode operating at a lower field (bias of 0.5 V).
Fig. 5. Electron velocity as a function of positon across the diode under influence of non-stationary field. Results shows little differences in the maximum velocity for the three biases: 0.5, 1.0 and 2.0 V. The velocity drops faster across the diode for diode operating at 2.0 V.
Fig. 6. Average electron energy as function of position across diode for several bias. The mean energy of electrons increases considerably with the bias.
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