[1] K S Boutros, R M Chu, B Hughes. GaN power electronics for automotive application. 2012 IEEE Energytech, 1(2012).
[2] D Piedra, B Lu, M Sun et al. Advanced power electronic devices based on gallium nitride (GaN). 2015 IEEE International Electron Devices Meeting, 16.6.1(2015).
[3] I C Kizilyalli, Y A Xu, E Carlson et al. Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors. 2017 IEEE 5th Work Wide Bandgap Power Devices Appl, 417(2017).
[4] K J Chen, O Häberlen, A Lidow et al. GaN-on-Si power technology: Devices and applications. IEEE Trans Electron Devices, 64, 779(2017).
[5] W Saito, T Nitta, Y Kakiuchi et al. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure. IEEE Trans Electron Devices, 54, 1825(2007).
[6] R M Chu, A Corrion, M Chen et al. 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance. IEEE Electron Device Lett, 32, 632(2011).
[7] X B Ma, J C Zhang, L L Guo et al. Effects of passivation and FP structure on current collapse in an AlGaN/GaN HEMT. Chin J Semicond, 28, 73(2007).
[8] Y Lei, u H Lu. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT. J Semicond, 36, 074007(2015).
[9] G Meneghesso, D Bisi, I Rossetto et al. Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs. 2016 IEEE Int Integr Reliab Work, 35(2016).
[10] R Zhao, S Huang, X H Wang et al. Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs. Appl Phys Lett, 116, 103502(2020).
[11] S Yang, Z K Tang, M Y Hua et al. Investigation of SiN
[12] A G Viey, W Vandendaele, M A Jaud et al. Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT. 2019 IEEE International Electron Devices Meeting, 4.3.1(2019).
[13] S Huang, X Liu, X Wang et al. Ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for manufacturing high-performance GaN-on-Si power devices. IEEE Trans on Electron Devices, 65, 207(2018).
[14] S Huang, X H Wang, X Y Liu et al. Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates. Appl Phys Express, 12, 024001(2019).
[15] S Huang, X Y Liu, X H Wang et al. High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure. IEEE Electron Device Lett, 37, 1617(2016).
[16] F Q Guo, S Huang, X H Wang et al. Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with