Lan Bi, Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Zhengyuan Xu, Jie Fan, Haibo Yin, Ke Wei, Xinyu Liu. Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs[J]. Journal of Semiconductors, 2022, 43(3): 032801
- Journal of Semiconductors
- Vol. 43, Issue 3, 032801 (2022)
Fig. 1. (Color online) (a) Cross sectional schematic of the E-mode AlGaN/GaN MIS-HEMT. (b) Microscope photograph of a 1-mm device.
Fig. 2. (Color online) (a) Transfer, (b) output, and (c) three-terminal off-state leakage of the 1-mm E-mode MIS-HEMT.
Fig. 3. (Color online) (a) Schematic of the gate-related capacitances in T-shape gate E-mode AlGaN/GaN MIS-HEMT. (b) Bias set of the C G–V G measurement, and (c) the multi-frequency curves of the 1-mm MIS-HEMT.
Fig. 4. (Color online) (a) Bias set of the C GD measurement. (b) C GD–V DG curves with varied hold and forward stressing voltage.
Fig. 5. (Color online) (a) Schematic and photo of the inductive switching circuit. (b) Waveform of the inductive switching under 50-V V BUS and (c) the turn-on transients of the DUT.
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