A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

Xiaojie Wang; Zhanwei Shen; Guoliang Zhang; Yuyang Miao; Tiange Li; Xiaogang Zhu; Jiafa Cai; Rongdun Hong; Xiaping Chen; Dingqu Lin; Shaoxiong Wu; Yuning Zhang; Deyi Fu; Zhengyun Wu; Feng Zhang

doi:10.1088/1674-4926/43/12/122802

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