• Laser & Optoelectronics Progress
  • Vol. 59, Issue 9, 0922028 (2022)
Zhijun Luo1、2、3, Ziyu Liu1、2、3, Shuhong Wang1、2、3, Duan Wang1、2、3, Zongsong Gan1、2、3、*, and Xinyao Du1、2、3
Author Affiliations
  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei , China
  • 2Key Laboratory of Information Storage System Ministry of Education of China, Huazhong University of Science and Technology, Wuhan 430074, Hubei , China
  • 3Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen 518057, Guangdong , China
  • show less
    DOI: 10.3788/LOP202259.0922028 Cite this Article Set citation alerts
    Zhijun Luo, Ziyu Liu, Shuhong Wang, Duan Wang, Zongsong Gan, Xinyao Du. Exploration to Next Generation of Lithography Technology: Concept, Technique, and Future of the 6th Generation of Super-Resolution Lithographic System[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922028 Copy Citation Text show less
    Schematic diagram of 2D bond overpass when the average number of single components is 4. (a) Single components can be connected or not connected in four directions; (b) single components form a 2D conductive network that is connected or not connected in four directions with a certain probability
    Fig. 1. Schematic diagram of 2D bond overpass when the average number of single components is 4. (a) Single components can be connected or not connected in four directions; (b) single components form a 2D conductive network that is connected or not connected in four directions with a certain probability
    Schematic diagram of the final effect of the Yin and Yang complementary mask and its dual-beam projection lithography
    Fig. 2. Schematic diagram of the final effect of the Yin and Yang complementary mask and its dual-beam projection lithography
    Dual-beam super-resolution lithographic system introduces a second beam of laser to correct the first laser diffraction edge. (a) With the complementary mask shape, the introduced second beam of auxiliary laser will narrow the exposure distribution of the photoresist at the first laser diffraction edge; (b) under the action of the second beam of dual-beam super-resolution lithography, the dual-beam lithography between the two patterns will widen the spatial size of the exposure between the two patterns not exceeding the threshold when the single exposure is far apart
    Fig. 3. Dual-beam super-resolution lithographic system introduces a second beam of laser to correct the first laser diffraction edge. (a) With the complementary mask shape, the introduced second beam of auxiliary laser will narrow the exposure distribution of the photoresist at the first laser diffraction edge; (b) under the action of the second beam of dual-beam super-resolution lithography, the dual-beam lithography between the two patterns will widen the spatial size of the exposure between the two patterns not exceeding the threshold when the single exposure is far apart
    Comparison of single-beam and double-beam projected lithography density. (a) Single-beam lithography can only perform 2 repeated exposures; (b) double-beam lithography can make repeated exposures more times, with higher density
    Fig. 4. Comparison of single-beam and double-beam projected lithography density. (a) Single-beam lithography can only perform 2 repeated exposures; (b) double-beam lithography can make repeated exposures more times, with higher density
    Schematic diagram of the energy direction and guidance mechanism. (a) Energy absorption direction of photoresist can be diverted by adding the energy direction channel or changing the energy flow speed of each channel; (b) using the method of stimulated radiation depletion, photoresist can be excited from the ground state to the excited state and relaxed to the low energy excited state, thus changing the direction of energy flow
    Fig. 5. Schematic diagram of the energy direction and guidance mechanism. (a) Energy absorption direction of photoresist can be diverted by adding the energy direction channel or changing the energy flow speed of each channel; (b) using the method of stimulated radiation depletion, photoresist can be excited from the ground state to the excited state and relaxed to the low energy excited state, thus changing the direction of energy flow
    Zhijun Luo, Ziyu Liu, Shuhong Wang, Duan Wang, Zongsong Gan, Xinyao Du. Exploration to Next Generation of Lithography Technology: Concept, Technique, and Future of the 6th Generation of Super-Resolution Lithographic System[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922028
    Download Citation