• Journal of Inorganic Materials
  • Vol. 35, Issue 11, 1290 (2020)
Ding SUN1、2, Yanyan DING1, Lingwei KONG3, Yuhong ZHANG2, Xiujuan GUO2, Liming WEI2, Li ZHANG4、*, and Lixin ZHANG1、*
Author Affiliations
  • 1School of Physics, Nankai University, Tianjin 300071, China
  • 2School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China
  • 3School of Materials Science and Engineering, Jilin Jianzhu University, Changchun 130118, China
  • 4Institute of Photo Electronics thin Film Devices and Technology, Nankai University, Tianjin 300071, China
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    DOI: 10.15541/jim200019 Cite this Article
    Ding SUN, Yanyan DING, Lingwei KONG, Yuhong ZHANG, Xiujuan GUO, Liming WEI, Li ZHANG, Lixin ZHANG. First-principles Study on Mg Doping in Cu2ZnSnS4[J]. Journal of Inorganic Materials, 2020, 35(11): 1290 Copy Citation Text show less
    Supercell used to calculate the defect properties of Mg-doped CZTS, where the red circles denote the locations of the antisite defects
    1. Supercell used to calculate the defect properties of Mg-doped CZTS, where the red circles denote the locations of the antisite defects
    Band structures of the host CZTS and the MgCu, MgZn and MgSn with different charge states
    2. Band structures of the host CZTS and the MgCu, MgZn and MgSn with different charge states
    Stable chemical potential region of CZTS(considering the Mg induced secondary phase MgS) with μCu = -0.5 eV
    3. Stable chemical potential region of CZTS(considering the Mg induced secondary phase MgS) with μCu = -0.5 eV
    The formation energies of Mg-related defects as a function of Fermi energy at point D shown in Fig. 3
    4. The formation energies of Mg-related defects as a function of Fermi energy at point D shown in Fig. 3
    The comparison of the formation energy of MgCu in pure CZTS and Mg doped CZTS as a function of chemical potential at points A, B, C and D shown in Fig. 3
    5. The comparison of the formation energy of MgCu in pure CZTS and Mg doped CZTS as a function of chemical potential at points A, B, C and D shown in Fig. 3
    The difference density charge (including Bader charges) for Mg doped CZTS
    6. The difference density charge (including Bader charges) for Mg doped CZTS
    Functionala/nmc/nmBand gap/eV
    PBE0.54711.09440.51
    HSE0.54691.09351.45
    Expt.[25]0.54271.08711.44-1.51
    Table 1.

    Lattice parameters a and c and band gaps of CZTS as obtained using PBE and HSE compared to experimental values

    PointDμCuDμZnDμSnDμMg
    A-0.5-1.93-1.76-3.11
    B-0.5-2.14-1.55-3.11
    C-0.5-1.97-1.04-2.94
    D-0.5-1.76-1.25-2.94
    Table 2.

    Chemical potentials at the A-D points labeled in Fig. 3/eV

    Ding SUN, Yanyan DING, Lingwei KONG, Yuhong ZHANG, Xiujuan GUO, Liming WEI, Li ZHANG, Lixin ZHANG. First-principles Study on Mg Doping in Cu2ZnSnS4[J]. Journal of Inorganic Materials, 2020, 35(11): 1290
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