• Journal of Semiconductors
  • Vol. 43, Issue 2, 021301 (2022)
Yuan Yuan, Bassem Tossoun, Zhihong Huang, Xiaoge Zeng, Geza Kurczveil, Marco Fiorentino, Di Liang, and Raymond G. Beausoleil
Author Affiliations
  • Hewlett Packard Labs, Hewlett Packard Enterprise, Milpitas, CA 95035, USA
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    DOI: 10.1088/1674-4926/43/2/021301 Cite this Article
    Yuan Yuan, Bassem Tossoun, Zhihong Huang, Xiaoge Zeng, Geza Kurczveil, Marco Fiorentino, Di Liang, Raymond G. Beausoleil. Avalanche photodiodes on silicon photonics[J]. Journal of Semiconductors, 2022, 43(2): 021301 Copy Citation Text show less

    Abstract

    Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last advances of monolithic and heterogeneous avalanche photodiodes on silicon are reviewed, including different device structures and semiconductor systems.
    $ \rm{SNR} = \frac{{I_{\rm{photo}}^2}}{{2q{I_{\rm{total}}}F(M)\Delta f + \dfrac{{\sigma _{\rm{circuit}}^2}}{{{M^2}}}}} , $ (1)

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    $ F(M) = kM + (1 - k)(2 - 1/M). $ (2)

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    $ {I_{\rm{dark}}} \propto {T^2}\exp \left( { - \frac{{{E_{\rm a}}}}{{{k_{\rm B}}T}}} \right), $ (3)

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    Yuan Yuan, Bassem Tossoun, Zhihong Huang, Xiaoge Zeng, Geza Kurczveil, Marco Fiorentino, Di Liang, Raymond G. Beausoleil. Avalanche photodiodes on silicon photonics[J]. Journal of Semiconductors, 2022, 43(2): 021301
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