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Journal of Semiconductors
Vol. 43, Issue 9, 092801 (2022)

Growth and characterization ofβ-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition

Yabao Zhang^1、2, Jun Zheng^1、2、*, Peipei Ma^1、2, Xueyi Zheng^1、3, Zhi Liu^1、2, Yuhua Zuo^1、2, Chuanbo Li³, and Buwen Cheng^1、2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Science, Minzu University of China, Beijing 100081, China

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DOI: 10.1088/1674-4926/43/9/092801 Cite this Article

Yabao Zhang, Jun Zheng, Peipei Ma, Xueyi Zheng, Zhi Liu, Yuhua Zuo, Chuanbo Li, Buwen Cheng. Growth and characterization ofβ-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2022, 43(9): 092801 Copy Citation Text

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References

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Yabao Zhang, Jun Zheng, Peipei Ma, Xueyi Zheng, Zhi Liu, Yuhua Zuo, Chuanbo Li, Buwen Cheng. Growth and characterization ofβ-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2022, 43(9): 092801

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