Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, Youdou Zheng. Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3[J]. Journal of Semiconductors, 2019, 40(1): 011805
- Journal of Semiconductors
- Vol. 40, Issue 1, 011805 (2019)
Fig. 1. (Color online) Schematic diagram of (a) horizontal HVPE and (b) vertical HVPE.
Fig. 2. (Color online) Optical photograph (unpublished) and SEM images of HVPE grown β -Ga2O3 at 850 °C.
![(Color online) The cross-section HRTEM of α- and ε-Ga2O3 on c-plane sapphire[40].](/Images/icon/loading.gif){kind=icon}
Fig. 3. (Color online) The cross-section HRTEM of α - and ε -Ga2O3 on c -plane sapphire[40 ].
Fig. 4. (Color online) Schematic Ga2O3 SBD structure with an HVPE-grown n-Ga2O3 drift layer.
Fig. 5. (Color online) Schematic structure, forward and reverse J–V characteristics of Ni/Au Ga2O3 SBD.
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