Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3

Xiangqian Xiu; Liying Zhang; Yuewen Li; Zening Xiong; Rong Zhang; Youdou Zheng

doi:10.1088/1674-4926/40/1/011805

Journals >Journal of Semiconductors >Volume 40 >Issue 1 >Page 011805 > Article

Journal of Semiconductors
Vol. 40, Issue 1, 011805 (2019)

Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga₂O₃

Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, and Youdou Zheng

Author Affiliations

Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

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DOI: 10.1088/1674-4926/40/1/011805 Cite this Article

Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, Youdou Zheng. Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga₂O₃[J]. Journal of Semiconductors, 2019, 40(1): 011805 Copy Citation Text

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Abstract

Halide vapor phase epitaxy (HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc. HVPE is a non-organic chemical vapor deposition (CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga₂O₃, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga₂O₃ substrates and for the fabrication of high power β-Ga₂O₃ devices.

${\rm{Ga}}\left( {\rm{s}} \right) + {\rm{HCl}}\left( {\rm{g}} \right) \to {\rm{GaCl}}\left( {\rm{g}} \right) + {{\rm H}_2}\left( {\rm g} \right),$

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${\rm{GaCl}}\left( {\rm{g}} \right) + {\rm O_2}\left( {\rm g} \right) \to {\rm G{a_2}{O_3}}\left( {\rm s} \right) + {\rm C{l_2}}\left( {\rm g} \right).$

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