[1] H Z Zhang, L J Wang, C T Xia et al. Research progress of wide-gap semiconductor
[2] D Gogova, G Wagner, M Balndini et al. Structural properties of Si-doped
[3] M Higashiwaki, K Sasali, T Kuramata et al. Depletion-mode Ga2O3 metal–oxide–semiconductor field-effect transistors on
[4] M H Wong, K Sasaki, A Kuramata et al. Field-plated Ga2O3 MOSFET with a breakdown voltage of over 750V. IEEE Electron Device Lett, 37, 212(2016).
[5] H Zhou, K Maize, G Qiu et al.
[6] T T Han, Y J Lv, P Liu et al. Research and fabrication of Ga2O3 MOSFET device with HfO2 gate dielectric. Semicond Technol, 43, 177(2018).
[7] Y J Lv, J H Mo, X B Song et al. Influence of gate recess on the electronic characteristics of