Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou, Zhihong Feng. Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V[J]. Journal of Semiconductors, 2019, 40(1): 012803
- Journal of Semiconductors
- Vol. 40, Issue 1, 012803 (2019)
Fig. 1. (Color online) Schematic cross section of the fabricated Ga2O3 MOSFET with L gd of 4 μ m.
Fig. 2. (Color online) (a) DC output and (b) transfer characteristics of the Ga2O3 MOSFET with L gd of 4 μ m.
Fig. 3. (Color online) Three-terminal off-state breakdown characteristics for the Ga2O3 MOSFET with and without source-field plate.
Fig. 4. (Color online) Breakdown characteristics for the Ga2O3 MOSFET with L gd of (a) 8 μ m and (b) different gate-to-drain length.
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