• Acta Optica Sinica
  • Vol. 40, Issue 10, 1023001 (2020)
Shibiao Liu, Guangxu Wang*, Xiaoming Wu, Chunlan Mo, and Jiangli Zhang
Author Affiliations
  • National Institute of LED on Silicon Substrate, Nanchang University, Nanchang, Jiangxi 330096, China
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    DOI: 10.3788/AOS202040.1023001 Cite this Article Set citation alerts
    Shibiao Liu, Guangxu Wang, Xiaoming Wu, Chunlan Mo, Jiangli Zhang. Electro-Static Failure Evolution of GaN-Based LED Thin Film Chip with Ag Mirrors[J]. Acta Optica Sinica, 2020, 40(10): 1023001 Copy Citation Text show less
    References

    [1] Schubert E F, Kim J K. Solid-state light sources getting smart[J]. Science, 308, 1274-1278(2005).

    [3] Steigerwald D A, Bhat J C, Collins D et al. Illumination with solid state lighting technology[J]. IEEE Journal of Selected Topics in Quantum Electronics, 8, 310-320(2002).

    [4] Li S Z, Zhuang M L, Yan W et al. Analysis on the electrostatic piercing test of the chips on the LED epitaxial wafers[J]. Semiconductor Optoelectronics, 36, 209-212(2015).

    [5] Jeon S K, Lee J G, Park E H et al. The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties[J]. Applied Physics Letters, 94, 131106(2009).

    [6] Meneghesso G, Podda S, Vanzi M. Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs[J]. Microelectronics Reliability, 41, 1609-1614(2001).

    [7] Wu G Q, Guo W L, Zhu Y X et al. Effects of human body mode electrostatic on carrier movement and the reliability of GaN-based blue light-emitting diode[J]. Chinese Journal of Luminescence, 33, 1132-1137(2012).

    [8] Cui D S, Guo W L, Cui B F et al. Effects of human-body-mode electrostatic-discharge on GaN-based power light-emitting diode[J]. Acta Optica Sinica, 31, 0323004(2011).

    [9] Jiang X A. Study on the epitaxial growth and efficiency improvement of GaN-based green LED grown on Si substrates[D]. Nanchang: Nanchang University, 34-35(2019).

    [10] Mo C L, Fang W Q, Pu Y et al. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD[J]. Journal of Crystal Growth, 285, 312-317(2005).

    [11] Wang G X, Tao X X, Liu J L et al. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures[J]. Semiconductor Science and Technology, 30, 015018(2015).

    [12] Liu J L, Feng F F, Zhou Y H et al. Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate[J]. Applied Physics Letters, 99, 111112(2011).

    [13] Liu J L, Tao X X, method of LED chip:201510120826.6[P]. -08-11(2017).

    [14] Wang G X, Chen P, Liu J L et al. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate[J]. Acta Physica Sinica, 65, 088501(2016).

    [15] Fujii T, Gao Y, Sharma R et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J]. Applied Physics Letters, 84, 855-857(2004).

    [16] Gao Y, Fujii T, Sharma R et al. Roughening hexagonal surface morphology on laser lift-off (LLO) n-face GaN with simple photo-enhanced chemical wet etching[J]. Japanese Journal of Applied Physics, 43, 637-639(2004).

    [17] Zhou Y H, Tang Y W, Rao J P et al. Improvement for extraction efficiency of vertical GaN-based LED on Si substrate by photo-enhanced wet etching[J]. Acta Optica Sinica, 29, 252-255(2009).

    [18] Gao G B, Li X X[M]. Reliability physics of semiconductor devices, 458-459(1987).

    [19] Huang B B, Xiong C B, Tang Y W et al. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate[J]. Acta Physica Sinica, 64, 177804(2015).

    [20] Xiong Y J, Zhang M, Xiong C B et al. Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si(111)[J]. Chinese Journal of Luminescence, 31, 531-537(2010).

    Shibiao Liu, Guangxu Wang, Xiaoming Wu, Chunlan Mo, Jiangli Zhang. Electro-Static Failure Evolution of GaN-Based LED Thin Film Chip with Ag Mirrors[J]. Acta Optica Sinica, 2020, 40(10): 1023001
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