• Journal of Semiconductors
  • Vol. 40, Issue 12, 122404 (2019)
Zhongjie Guo1, Ningmei Yu1, and Longsheng Wu2
Author Affiliations
  • 1School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China
  • 2Xi’an Microelectronic Technology Institute, Xi’an 710054, China
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    DOI: 10.1088/1674-4926/40/12/122404 Cite this Article
    Zhongjie Guo, Ningmei Yu, Longsheng Wu. Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor[J]. Journal of Semiconductors, 2019, 40(12): 122404 Copy Citation Text show less
    Column readout with two buffers.
    Fig. 1. Column readout with two buffers.
    Column readout with single buffer.
    Fig. 2. Column readout with single buffer.
    (a) Proposed column readout. (b) Control timing of the proposed circuit.
    Fig. 3. (a) Proposed column readout. (b) Control timing of the proposed circuit.
    (a) Reset level sample phase. (b) Image level sample phase. (c) Reset level buffer phase. (d) Image level buffer phase.
    Fig. 4. (a) Reset level sample phase. (b) Image level sample phase. (c) Reset level buffer phase. (d) Image level buffer phase.
    n columns readout schematic.
    Fig. 5. n columns readout schematic.
    Control timing of n columns readout.
    Fig. 6. Control timing of n columns readout.
    (Color online) Die micrograph.
    Fig. 7. (Color online) Die micrograph.
    Output code and nonuniformity versus exposure time.
    Fig. 8. Output code and nonuniformity versus exposure time.
    Comparison of actual images before and after optimization. (a) Image with traditional technique. (b) Image with proposed technique.
    Fig. 9. Comparison of actual images before and after optimization. (a) Image with traditional technique. (b) Image with proposed technique.
    ParameterThis workRef. [7] Ref. [10]
    Process55 nm CMOS40 nm CMOS180 nm CMOS
    Pixel size (μm) 5.45.42.8
    Supply (V)3.3/1.22.5/2/1.13.3/1.8
    Horizontal time (μs) 56.021.92
    Column FPN (%)0.00750.0280.31
    Read noise (μVrms) 190261.5320
    Dynamic range (intrinsic) (dB)7571.862.9
    Photo response nonuniformity1.16%N/AN/A
    Table 1. Performance summary and comparison with the state of the art.
    Zhongjie Guo, Ningmei Yu, Longsheng Wu. Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor[J]. Journal of Semiconductors, 2019, 40(12): 122404
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