Researching | A novel one-time-programmable memory unit based on Schottky-type p-GaN diode

Journals >Journal of Semiconductors >Volume 45 >Issue 3 >Page 032502 > Article

Journal of Semiconductors
Vol. 45, Issue 3, 032502 (2024)

A novel one-time-programmable memory unit based on Schottky-type p-GaN diode

Chao Feng^1、2, Xinyue Dai^1、2, Qimeng Jiang^1、2、*, Sen Huang^1、2、**, Jie Fan¹, Xinhua Wang^1、2, and Xinyu Liu^1、2

Author Affiliations

¹Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

²University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/45/3/032502 Cite this Article

Chao Feng, Xinyue Dai, Qimeng Jiang, Sen Huang, Jie Fan, Xinhua Wang, Xinyu Liu. A novel one-time-programmable memory unit based on Schottky-type p-GaN diode[J]. Journal of Semiconductors, 2024, 45(3): 032502 Copy Citation Text

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References

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[14] X Y Dai, Z C Ji, Q M Jiang et al. Suppression of reverse leakage in enhancement-mode GaN high-electron-mobility transistor by extended PGaN technology. Phys Status Solidi A, 220, 2200692(2023).

[15] A N Tallarico, S Stoffels, P Magnone et al. Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs. IEEE Electron Device Lett, 38, 99(2017).

[16] C Feng, Q M Jiang, S Huang et al. Gate-bias-accelerated VTH recovery on schottky-type p-GaN gate AlGaN/GaN HEMTs. IEEE Trans Electron Devices, 70, 4591(2023).

[17] F Lee, L Y Su, C H Wang et al. Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors. IEEE Electron Device Lett, 36, 232(2015).

[18] T L Wu, D Marcon, S Z You et al. Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. IEEE Electron Device Lett, 36, 1001(2015).

[19] S Stoffels, B Bakeroot, T L Wu et al. Failure mode for p-GaN gates under forward gate stress with varying Mg concentration, 4B(2017).

[20] F Masin, M Meneghini, E Canato et al. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Appl Phys Lett, 115, 052103(2019).

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Chao Feng, Xinyue Dai, Qimeng Jiang, Sen Huang, Jie Fan, Xinhua Wang, Xinyu Liu. A novel one-time-programmable memory unit based on Schottky-type p-GaN diode[J]. Journal of Semiconductors, 2024, 45(3): 032502

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