Fig. 1. (Color online) (a) Schematic crystal structure of Bi₂Te₃. (b) XRD patterns of (Ce_xBi_1–x)₂Te₃ thin films (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05).

Fig. 2. (Color online) (a) Resistivity of (Ce_xBi_1–x)₂Te₃ samples at different temperatures. Curves have been shifted for better visibility. (b) Normalized resistivity of (Ce_xBi_1–x)₂Te₃ at 3.5–25 K. (Solid lines: fits to Eq. (1).) (c) Magnetoresistance of (Ce_xBi_1–x)₂Te₃ at 4 K. (d) Magnetoresistance of (Ce_0.04Bi_0.96)₂Te₃ at 4–14 K.

Fig. 3. (Color online) (a) Magnetoconductance of samples with different dopant concentrations under different perpendicular magnetic field at 4 K (solid lines – fits to Eq. (3)). (b) Magnetoconductance of (Ce_0.04Bi_0.96)₂Te₃ under different perpendicular magnetic field at different temperatures (solid lines – fits to Eq. (3)). (c) The change of fitting parameters and α with different dopant concentration. (d) The change of fitting parameters and α of (Ce_0.04Bi_0.96)₂Te₃ and Bi₂Te₃ at different temperatures (solid line – fit to Eq. (5)).

Table 1. Fitting results of the parameters in Eq. (1). All parameters are in corresponding SI units.

Table 2. Parameters extracted by fitting magnetoconductance data with Eqs. (3) and (5). is the phase coherence length, α is the coefficient in HLN formula and m is the power factor in Eq. (5).