Wei Ye, Pengfei Du, Beibei Quan, Mengfei Li, Sheng Xiao, Jia Liu. Effect of In0.83Al0.17As Multiplication Layer on Characteristics of In0.83Ga0.17As/GaAs Avalanche Photodetector[J]. Acta Optica Sinica, 2023, 43(4): 0404001
- Acta Optica Sinica
- Vol. 43, Issue 4, 0404001 (2023)
Fig. 1. Schematic diagram of device structure
Fig. 2. Energy band and electric field distribution of device
Fig. 3. Relationship between refractive index and wavelength. (a) InGaAs material; (b) InAlAs material
Fig. 4. Current characteristics of device. (a) I-V characteristics; (b) gain
Fig. 5. Electric field distributions of device. (a) Effect of doping concentration of multiplication layer on electric field distribution;(b) effect of thickness of multiplication layer on electric field distribution
Fig. 6. Effect of doping concentration of multiplication layer on Vp and Vb. (a) I-V characteristics; (b) change curves of Vp and Vb
Fig. 7. Effect of thickness of multiplication layer on Vp and Vb. (a) I-V characteristics; (b) change curves of Vp and Vb
Fig. 8. C-V characteristic of devices. (a) Effect of doping concentration of multiplication layer on capacitance; (b) effect of thickness of multiplication layer on capacitance
|
Table 1. Material parameters in simulation model
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20