Effect of In0.83Al0.17As Multiplication Layer on Characteristics of In0.83Ga0.17As/GaAs Avalanche Photodetector

Wei Ye; Pengfei Du; Beibei Quan; Mengfei Li; Sheng Xiao; Jia Liu

doi:10.3788/AOS221416

Journals >Acta Optica Sinica >Volume 43 >Issue 4 >Page 0404001 > Article

Acta Optica Sinica
Vol. 43, Issue 4, 0404001 (2023)

Effect of In_0.83Al_0.17As Multiplication Layer on Characteristics of In_0.83Ga_0.17As/GaAs Avalanche Photodetector

Wei Ye^1、*, Pengfei Du^1、aff, Beibei Quan^2、aff, Mengfei Li^1、aff, Sheng Xiao^1、aff, and Jia Liu^1、aff

Author Affiliations

¹School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, China

²Northwest Industries Group Co., Ltd., Xi'an 710043, Shaanxi, China

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DOI: 10.3788/AOS221416 Cite this Article Set citation alerts

Wei Ye, Pengfei Du, Beibei Quan, Mengfei Li, Sheng Xiao, Jia Liu. Effect of In_0.83Al_0.17As Multiplication Layer on Characteristics of In_0.83Ga_0.17As/GaAs Avalanche Photodetector[J]. Acta Optica Sinica, 2023, 43(4): 0404001 Copy Citation Text

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