• Journal of Semiconductors
  • Vol. 42, Issue 11, 112802 (2021)
Xi Wang1、2, Yiwen Zhong1, Hongbin Pu1、2, Jichao Hu1、2, Xianfeng Feng1、2, and Guowen Yang3
Author Affiliations
  • 1Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 2Xi’an Key Laboratory of power Electronic Devices and High Efficiency Power Conversion, Xi’an 710048, China
  • 3Sanli Intelligent Electric Co., Ltd, Xi’an 712000, China
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    DOI: 10.1088/1674-4926/42/11/112802 Cite this Article
    Xi Wang, Yiwen Zhong, Hongbin Pu, Jichao Hu, Xianfeng Feng, Guowen Yang. Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip[J]. Journal of Semiconductors, 2021, 42(11): 112802 Copy Citation Text show less
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    Xi Wang, Yiwen Zhong, Hongbin Pu, Jichao Hu, Xianfeng Feng, Guowen Yang. Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip[J]. Journal of Semiconductors, 2021, 42(11): 112802
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