Xi Wang, Yiwen Zhong, Hongbin Pu, Jichao Hu, Xianfeng Feng, Guowen Yang. Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip[J]. Journal of Semiconductors, 2021, 42(11): 112802
- Journal of Semiconductors
- Vol. 42, Issue 11, 112802 (2021)
Fig. 1. (Color online) Schematics of the device structures used in the simulation. (a) Considering the lateral spreading current. (b) Ignoring the lateral spreading current.
Fig. 2. Simulated relationship between chip size and proportion of spread current in the total forward current.
Fig. 3. (Color online) Top view of the fabricated SiC SBD chip.
Fig. 4. (Color online) Current–voltage curves of the fabricated SBD chips. (a) Forward current–voltage curves. (b) Reverse current–voltage curves.
Fig. 5. (Color online) Current density–voltage curves of the fabricated SBD chips. (a) Forward current density–voltage curves. (b) I F/S A–voltage curves. (c) Reverse current density–voltage curves. (d) I R/S A–voltage curves.
Fig. 6. (Color online) Schematic diagrams of the lateral current spreading in the 4H-SiC SBD chip. (a) Cross-section view. (b) Vertical view.
Fig. 7. (Color online) Calculated J sp and P sp at different anode voltages of the SBD chips.
Fig. 8. K sp–S curve and P sp of the fabricated SBD chips.
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Table 1. Models and parameters used in the simulation.
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