[1] M A Khan, J N Kuznia, A R Bhattarai et al. Metal semiconductor field effect transistor based on single crystal GaN. Appl Phys Lett, 62, 1786(1993).
[2] O Ambacher, rt J Smart, y J R Shealy et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped. J Appl Phys, 85, 3222(2000).
[3] S C Jain, M Willander, J Narayan et al. III-nitrides: Growth, characterization, and properties. J Appl Phys, 87, 965(2000).
[4] X L Wang, G X Hu, Z Y Ma et al. MOCVD-grown AlGaN/AlN/GaN HEMT structure with high mobility GaN thin layer as channel on SiC. Chin J Semicond, 27, 1521(2006).
[5] A Fletcher, D Nirmal, J Ajayan et al. An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT. Silicon, 13, 1591(2020).
[6] Y Gao, H Zhang, Y Zong et al. 150 mm 4H-SiC substrate with low defect density. Mater Sci Forum, 858, 41(2016).
[7] B K Jang, J H Park, J W Choi et al. Modified hot-zone design of growth cell for reducing the warpage of 6"-SiC wafer. Mater Sci Forum, 1004, 32(2020).
[8] U K Mishra, P Parikh, Y F Wu. AlGaN/GaN HEMTs-an overview of device operation and applications. Proc IEEE, 90, 1022(2002).
[9] R S Pengelly. A review of GaN on SiC high electron-mobility power transistors and MMICs. IEEE Trans Microwave Theory Tech, 60, 1764(2012).
[10] V Camarchia, R Quaglia, A Piacibello et al. A review of technologies and design techniques of millimeter-wave power amplifiers. IEEE Trans Microwave Theory Tech, 68, 2957(2020).
[11] X L Wang, T S Chen, H L Xiao et al. High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4W@8GHz. Solid-State Electron, 52, 926(2008).
[12] X L Wang, T S Chen, H L Xiao et al. An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application. Solid State Electron, 53, 332(2009).
[13] Q Wang, X L Wang, H L Xiao et al. X-band GaN high electron mobility transistor power amplifier on 6H-SiC with 110 W output power. J Nanosci Nanotechnol, 18, 7451(2018).
[14] U K Mishra, L Shen, T E Kazior et al. GaN-based RF power devices and amplifiers. Proc IEEE, 96, 287(2008).
[15] C Chen, R Sadler, D Wang et al. The interplay of thermal, time and Poole-Frenkel emission on the trap-based physical modeling of GaN HEMT drain characteristics. 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1(2017).
[16] K Kellogg, S Khandelwal, L Dunleavy et al. Characterization of thermal and trapping time constants in a GaN HEMT. 2020 94th ARFTG Microwave Measurement Symposium (ARFTG), 1(2020).
[17] L Q Zhang, P F Wang. AlGaN/GaN HEMT with LPCVD deposited SiN and PECVD deposited SiCOH low-k passivation. Appl Phys Express, 12, 036501(2019).
[18] A Nakajima, K Itagaki, K Horio. Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. Phys Status Solidi C, 6, 2840(2009).
[19] Y Bi, X L Wang, H L Xiao et al. The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure. Eur Phys J-Appl Phys, 55, 10102(2011).
[20] L Shen, S Heikman, B Moran et al. AlGaN/AlN/GaN high-power microwave HEMT. IEEE Electron Device Lett, 22, 457(2001).
[21] E T Yu, X Z Dang, L S Yu et al. Schottky barrier engineering in III-V nitrides via the piezoelectric effect. Appl Phys Lett, 73, 1880(1998).
[22] T Gessmann, J W Graff, Y L Li et al. Ohmic contact technology in III-V nitrides using polarization effects in cap layers. IEEE Lester Eastman Conference on High Performance Devices, 492(2002).
[23] S Arulkumaran, T Egawa, H Ishikawa. Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors. Jpn J Appl Phys, 44, 2953(2005).
[24] J M Gong, Q Wang, J D Yan et al. Comparison of GaN/AlGaN/AlN/GaN HEMTs grown on sapphire with Fe-modulation-doped and unintentionally doped GaN buffer: Material growth and device fabrication. Chin Phys Lett, 33, 103(2016).
[25] M Singh, M J Uren, T Martin et al. 'Kink' in AlGaN/GaN-HEMTs: Floating buffer model. IEEE Trans Electron Devices, 65, 3746(2018).
[26] L H Fu, H Lu, D J Chen et al. Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors. Appl Phys Lett, 98, 586(2011).
[27] M A Alim, S Afrin, A A Rezazadeh et al. Thermal response and correlation between mobility and kink effect in GaN HEMTs. Microelectron Eng, 219, 111148.1(2020).
[28]
[29] B Gelmont, K Kim, M Shur. Monte Carlo simulation of electron transport in gallium nitride. J Appl Phys, 74, 1818(1993).
[30]
[31]
[32] A M Darwish, B D Huebschman, E Viveiros et al. Dependence of GaN HEMT millimeter-wave performance on temperature. IEEE Trans Microwave Theory Tech, 57, 3205(2009).
[33] J Kühn. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications. KIT Scientific Publishing(2011).
[34] R Vetury, N Q Zhang, S Keller et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans Electron Devices, 48, 560(2001).
[35] R Chu, L Shen, N Fichtenbaum et al. Correlation between DC–RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs. IEEE Electron Device Lett, 29, 303(2008).
