Based on the current development direction of infrared detector technology. The advantages of HgCdTe high operation temperature (HOT) infrared detector were analyzed in terms of module weight, shape size, power consumption, environmental adaptability and reliability from the perspective of application requirements of HOT infrared detector. The technical route and research status of HgCdTe HOT infrared detector in Europe and America were summarized. From the perspective of device dark current and noise mechanism, the change of dark current and noise at different operating temperatures and their effects on device performance were analyzed. The basic principles of the process optimization HgCdTe devices based on Hg vacancy n-on-p structure, extrinsic doped HgCdTe HOT devices based on in-doped p-on-n structure and Au doped n-on-p structure, nBn based HOT devices based on barrier structure and non-equilibrium mode HgCdTe HOT devices based on thermally excited carrier auger suppression in absorption layer were summarized. The performance of HgCdTe HOT devices with different technology routes and the technical difficulties in the preparation of detectors were compared and analyzed. Based on the comprehensive analysis of the performance and technical difficulties of HOT devices with different technology routes, the future development direction of HgCdTe HOT device technology was prospected. It is considered that the fully depleted device based on low concentration doping absorption layer has better development potential.