Researching | Super high maximum on-state currents in 2D transistors

Journals >Journal of Semiconductors >Volume 43 >Issue 12 >Page 120401 > Article

Journal of Semiconductors
Vol. 43, Issue 12, 120401 (2022)

Super high maximum on-state currents in 2D transistors

Xiaotian Sun^1、*, Qiuhui Li³, Ruge Quhe^2、**, Yangyang Wang⁴, and Jing Lu^{3、5、6、7、8、***}

Author Affiliations

¹College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang 471934, China

²State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

³State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

⁴Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, China

⁵Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

⁶Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, China

⁷Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, China

⁸Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China

show less

DOI: 10.1088/1674-4926/43/12/120401 Cite this Article

Xiaotian Sun, Qiuhui Li, Ruge Quhe, Yangyang Wang, Jing Lu. Super high maximum on-state currents in 2D transistors[J]. Journal of Semiconductors, 2022, 43(12): 120401 Copy Citation Text

show less

References

[1] Y Liu, X D Duan, H J Shin et al. Promises and prospects of two-dimensional transistors. Nature, 591, 43(2021).

[2] M Y Li, S K Su, H S P Wong et al. How 2D semiconductors could extend Moore's law. Nature, 567, 169(2019).

[3] Y Y Wang, S Q Liu, Q H Li et al. Schottky barrier heights in two-dimensional field-effect transistors: From theory to experiment. Rep Prog Phys, 84, 056501(2021).

[4] R G Quhe, L Xu, S Q Liu et al. Sub-10 nm two-dimensional transistors: Theory and experiment. Phys Rep, 938, 1(2021).

[5] P C Shen, C Su, Y X Lin et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 593, 211(2021).

[6] L Liu, T T Li, L Ma et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 605, 69(2022).

[7] Z Y Ni, M Ye, J H Ma et al. Performance upper limit of sub-10 nm monolayer MoS 2 transistors. Adv Electron Mater, 2, 1600191(2016).

[8] R X Wu, Q Y Tao, J Li et al. Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre. Nat Electron, 5, 497(2022).

[9] X T Sun, L Xu, Y Zhang et al. Performance limit of monolayer WSe 2 transistors; significantly outperform their MoS 2 counterpart. ACS Appl Mater Interfaces, 12, 20633(2020).

[10] C G Qiu, Z Y Zhang, M M Xiao et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science, 355, 271(2017).

[11] The International Technology Roadmap for Semiconductors (ITRS). Online available,https://irds.ieee.org/editions/2021

[12] The International Roadmap for Devices and Systems (IRDS). Online available:https://ieeexplore.ieee.org/abstract/document/7046976

[13] S Natarajan, M Agostinelli, S Akbar et al. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm 2 SRAM cell size. 2014 IEEE International Electron Devices Meeting, 3.7.1(2014).

[14] Y C Zhang, J Yu, R X Zhu et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nat Electron, 5, 643(2022).

Figures&Tables (1)

References (14)

Copy Citation Text

Xiaotian Sun, Qiuhui Li, Ruge Quhe, Yangyang Wang, Jing Lu. Super high maximum on-state currents in 2D transistors[J]. Journal of Semiconductors, 2022, 43(12): 120401

Download Citation

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address