Super high maximum on-state currents in 2D transistors

Xiaotian Sun; Qiuhui Li; Ruge Quhe; Yangyang Wang; Jing Lu

doi:10.1088/1674-4926/43/12/120401

Journals >Journal of Semiconductors >Volume 43 >Issue 12 >Page 120401 > Article

Journal of Semiconductors
Vol. 43, Issue 12, 120401 (2022)

Super high maximum on-state currents in 2D transistors

Xiaotian Sun^1、*, Qiuhui Li³, Ruge Quhe^2、**, Yangyang Wang⁴, and Jing Lu^{3、5、6、7、8、***}

Author Affiliations

¹College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang 471934, China

²State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

³State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

⁴Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, China

⁵Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

⁶Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, China

⁷Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, China

⁸Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China

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DOI: 10.1088/1674-4926/43/12/120401 Cite this Article

Xiaotian Sun, Qiuhui Li, Ruge Quhe, Yangyang Wang, Jing Lu. Super high maximum on-state currents in 2D transistors[J]. Journal of Semiconductors, 2022, 43(12): 120401 Copy Citation Text

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(Color online) Benchmarking sub-100-nm bilayer WSe2 transistors (red ball) against the (a)Ionmaxfor 2D semiconductor transistors (b-P, b-As, b-AsP, MoS2, MoS2-0.7 nm, WSe2-0.7 nm, WS2, WS2-0.7 nm, MoTe2, GeAs, InSe, SnSe, ReS2, PtSe2, ZrSe2, HfSe2) andIon of 2021 silicon transistor (black ball) reported in ITRS, and (b) theRonmin(lowest on-state resistance) with those reported in the literature[8]. Reproduced with permission from Springer Nature, copyright 2022.

Fig. 1. (Color online) Benchmarking sub-100-nm bilayer WSe₂ transistors (red ball) against the (a)

I_{on}^{max}

for 2D semiconductor transistors (b-P, b-As, b-AsP, MoS₂, MoS₂-0.7 nm, WSe₂-0.7 nm, WS₂, WS₂-0.7 nm, MoTe₂, GeAs, InSe, SnSe, ReS₂, PtSe₂, ZrSe₂, HfSe₂) andI_on of 2021 silicon transistor (black ball) reported in ITRS, and (b) the

R_{on}^{min}

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Xiaotian Sun, Qiuhui Li, Ruge Quhe, Yangyang Wang, Jing Lu. Super high maximum on-state currents in 2D transistors[J]. Journal of Semiconductors, 2022, 43(12): 120401

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