Author Affiliations
1Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA2Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA3Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwanshow less
Fig. 1. Epitaxial stack design and the fabricated Ge/SiGe MQW microdisks. (a) Schematic of the Ge/SiGe MQW epitaxial structure. (b) Scanning electron microscope (SEM) image of a nonsuspended Ge/SiGe MQW microdisk. (c) SEM image of a suspended Ge/SiGe MQW microdisk supported by a Si post.
Fig. 2. Room-temperature PL of a suspended Ge/SiGe MQW microdisk exhibiting FP mode resonances. Inset: Bulk Ge reference showing direct bandgap emission at 1550 nm.
Fig. 3. 3D-FEM simulation for tensile-strained microdisks. (a) Schematic of type 1, type 2, and type 3 SiNx stressor configurations. (b) Cross section of the simulated strain distribution for a type 1 Ge microdisk. (c) Comparison of strain profiles for all three configurations of Ge/stressor microdisks.
Fig. 4. (a) Schematic of the epitaxial stack of the Ge/SiGe MQW microdisk. (b) Fabrication process flow for a tensile-strained, suspended Ge/SiGe MQW microdisk. (c) SEM image of a Ge/SiGe MQW microdisk without SiNx stressor [step 8 in (b)]. (d) SEM image of a Ge/SiGe MQW microdisk with SiNx stressor [step 9 in (b)].
Fig. 5. PL and Raman characterizations of Ge/SiGe MQW microdisks. (a) Room-temperature PL of strained (red and blue) and unstrained (black) microdisks. (b) Typical Raman spectrum from the center of a microdisk. (c) Raman line scan along the diameter of a strained, suspended Ge/SiGe MQW microdisk.
Fig. 6. Comparisons of simulation, PL, and Raman measurements. (a) Devices 1, 2 (440 nm thick, 6 μm diameter). (b) Devices 3, 4 (440 nm thick, 10 μm diameter). (c) Devices 5, 6 (340 nm thick, 6 μm diameter). (d) Devices 7, 8 (340 nm thick, 10 μm diameter).
Fig. 7. Optical gain calculations for Ge/SiGe MQW. (a) Band alignment of strain-balanced Ge/Si0.19Ge0.81 MQW without external strain. (b) Band alignment of strain-balanced Ge/Si0.19Ge0.81 MQW with 1% external biaxial tensile strain. (c) TE and TM net gain spectra for Ge QW with different external biaxial tensile strain, assuming n-type doping concentration of 5×1019 cm−3 and an injection of 2×1019 cm−3. Without external tensile strain, net gain is negative, meaning lasing is not achieved. As external tensile strain increases, net gain increases remarkably. Peak gain reaches positive ∼600 cm−1 with 1% of external tensile strain.
| Microdisk | Microdisk | Stressor | Device # | Thickness (nm) | Diameter (μm) | Thickness (nm) | 1 | 440 | 6 | 130 | 2 | 440 | 6 | 245 | 3 | 440 | 10 | 130 | 4 | 440 | 10 | 245 | 5 | 340 | 6 | 130 | 6 | 340 | 6 | 245 | 7 | 340 | 10 | 130 | 8 | 340 | 10 | 245 |
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Table 1. Parameters of the Investigated Microdisks