Tensile-strained Ge/SiGe multiple quantum well microdisks

Xiaochi Chen; Colleen S. Fenrich; Muyu Xue; Ming-Yen Kao; Kai Zang; Ching-Ying Lu; Edward T. Fei; Yusi Chen; Yijie Huo; Theodore I. Kamins; James S. Harris

doi:10.1364/PRJ.5.0000B7

Journals >Photonics Research >Volume 5 >Issue 6 >Page B7 > Article

Photonics Research
Vol. 5, Issue 6, B7 (2017)

Tensile-strained Ge/SiGe multiple quantum well microdisks

Xiaochi Chen^1、*, Colleen S. Fenrich², Muyu Xue², Ming-Yen Kao³, Kai Zang¹, Ching-Ying Lu¹, Edward T. Fei¹, Yusi Chen¹, Yijie Huo¹, Theodore I. Kamins¹, and James S. Harris¹

Author Affiliations

¹Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

²Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

³Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan

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DOI: 10.1364/PRJ.5.0000B7 Cite this Article Set citation alerts

Xiaochi Chen, Colleen S. Fenrich, Muyu Xue, Ming-Yen Kao, Kai Zang, Ching-Ying Lu, Edward T. Fei, Yusi Chen, Yijie Huo, Theodore I. Kamins, James S. Harris. Tensile-strained Ge/SiGe multiple quantum well microdisks[J]. Photonics Research, 2017, 5(6): B7 Copy Citation Text

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