• Journal of Semiconductors
  • Vol. 41, Issue 1, 012101 (2020)
Huiying Zhou1, Haiping Shi2, and Baochang Cheng2、3
Author Affiliations
  • 1Computer and Information Engineering School, Central South University of Forestry and Technology, Changsha 410004, China
  • 2School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
  • 3Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, China
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    DOI: 10.1088/1674-4926/41/1/012101 Cite this Article
    Huiying Zhou, Haiping Shi, Baochang Cheng. Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire[J]. Journal of Semiconductors, 2020, 41(1): 012101 Copy Citation Text show less
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    Huiying Zhou, Haiping Shi, Baochang Cheng. Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire[J]. Journal of Semiconductors, 2020, 41(1): 012101
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