Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

Wen Gu; Zhibin Liu; Yanan Guo; Xiaodong Wang; Xiaolong Jia; Xingfang Liu; Yiping Zeng; Junxi Wang; Jinmin Li; Jianchang Yan

doi:10.1088/1674-4926/41/12/122802

Journals >Journal of Semiconductors >Volume 41 >Issue 12 >Page 122802 > Article

Journal of Semiconductors
Vol. 41, Issue 12, 122802 (2020)

Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

Wen Gu^1、2, Zhibin Liu^1、2、3, Yanan Guo^1、2、3, Xiaodong Wang^1、2、3, Xiaolong Jia⁴, Xingfang Liu^2、5, Yiping Zeng^4、5、6, Junxi Wang^1、2、3, Jinmin Li^1、2、3, and Jianchang Yan^1、2、3

Author Affiliations

¹Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

⁴Advanced Ultraviolet Optoelectronics Co. Ltd, Changzhi 046000, China

⁵Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁶Youwill Hitech Co. Ltd, Beijing 100083, China

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DOI: 10.1088/1674-4926/41/12/122802 Cite this Article

Wen Gu, Zhibin Liu, Yanan Guo, Xiaodong Wang, Xiaolong Jia, Xingfang Liu, Yiping Zeng, Junxi Wang, Jinmin Li, Jianchang Yan. Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions[J]. Journal of Semiconductors, 2020, 41(12): 122802 Copy Citation Text

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(Color online) The (a) (0002)- and (b) (102)-plane XRCs of the AlN films sputtered at 2000 W, 600 °C and 100 sccm N2 before and after HT annealing.

Fig. 1. (Color online) The (a) (0002)- and (b) (10

2)-plane XRCs of the AlN films sputtered at 2000 W, 600 °C and 100 sccm N₂ before and after HT annealing.

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Fig. 2. (Color online) The FWHM values of (10

2)-plane of the annealed AlN films with different substrate temperatures at 2000 and 3000 W.

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Fig. 3. (Color online) The (0002)-plane XRCs of the AlN films sputtered at (a) 2000 and (b) 3000 W with various substrate temperatures before HT annealing.

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Fig. 4. (Color online) Raman spectrum of the AlN films sputtered at (a) 2000 and (b) 3000 W, a N₂ flux of 100 sccm, and various substrate temperatures before annealing. (c) The E₂^(high) peak frequency of sputtered and annealed AlN films with different substrate temperatures.

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Fig. 5. (Color online) 5 × 5 μm² AFM images of the AlN films sputtered at 2000 W, a N₂ flux of 100 sccm and substrate temperatures of (a) 550, (b) 600, (c) 650 and (d) 700 °C before annealing and (e) 550, (f) 600, (g) 650 and (h) 700 °C after annealing.

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Fig. 6. The effect of N₂ flux on the FWHM values of (10

2)-plane of the annealed AlN films.

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Fig. 7. (Color online) The (0002)-plane XRCs of the AlN films sputtered at (a) 2000 and (b) 3000 W before annealing with various N₂ fluxes.

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Fig. 8. (Color online) AFM images of the AlN films sputtered at 2000 W and 600 °C with N₂ fluxes of (a) 100, (b) 150 and (c) 180 sccm before annealing and (d) 100, (e) 150 and (f) 180 sccm after annealing.

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Sputtering parameter	Value
Target	Al (> 99.9999 at%)
Substrate	c-sapphire
Target to substrate distance	64.8 mm
Substrate temperature	550–700 °C
N₂ flux	100–190 sccm
RF power	2000 and 3000 W
Process pressure	0.31 to 0.55 Pa
Deposition rate	0.20–0.32 nm/s
Targeted AlN thickness	200 nm

Table 1. Sputtering parameters for the deposition of AlN films.

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Sputtering condition	Deposition rate (nm/s)	Actual thickness (nm)	FWHM values of XRC (arcsec)		RMS (nm)
Sputtering condition	Deposition rate (nm/s)	Actual thickness (nm)	(0002)-plane	(10 2)-plane	RMS (nm)
2000 W, 100 sccm, 550 °C	0.210	213.77	360	3229	0.852
2000 W, 100 sccm, 600 °C	0.216	219.72	270	2941	1.510
2000 W, 100 sccm, 650 °C	0.233	237.42	191	2714	2.200
2000 W, 100 sccm, 700 °C	0.197	200.70	130	2491	0.988
3000 W, 100 sccm, 550 °C	0.330	207.93	184	3301	0.850
3000 W, 100 sccm, 600 °C	0.340	214.19	241	2923	0.995
3000 W, 100 sccm, 650 °C	0.346	218.17	205	2664	1.060
3000 W, 100 sccm, 700 °C	0.316	199.31	119	2584	0.955
2000 W, 150 sccm, 600 °C	0.206	209.28	371	2776	1.860
2000 W, 180 sccm, 600 °C	0.218	220.40	349	2743	1.930
3000 W, 150 sccm, 600 °C	0.315	198.23	292	2966	1.970
3000 W, 180 sccm, 600 °C	0.322	202.65	410	3049	2.010

Table 2. Characterizations for the sputtered AlN films.

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