• Chinese Optics Letters
  • Vol. 19, Issue 8, 082504 (2021)
Zhicheng Dai1, Yushen Liu2, Guofeng Yang1、*, Feng Xie3, Chun Zhu1, Yan Gu1, Naiyan Lu1, Qigao Fan1, Yu Ding1, Yuhang Li1, Yingzhou Yu1, and Xiumei Zhang1
Author Affiliations
  • 1School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
  • 2School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215556, China
  • 3The 38th Research Institute of China Electronics Technology Group Corporation, Hefei 230000, China
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    DOI: 10.3788/COL202119.082504 Cite this Article Set citation alerts
    Zhicheng Dai, Yushen Liu, Guofeng Yang, Feng Xie, Chun Zhu, Yan Gu, Naiyan Lu, Qigao Fan, Yu Ding, Yuhang Li, Yingzhou Yu, Xiumei Zhang. Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content[J]. Chinese Optics Letters, 2021, 19(8): 082504 Copy Citation Text show less
    References

    [1] D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, W. H. Tang. Self-powered solar-blind photodetectors based on α/β phase junction of Ga2O3. Phys. Rev. Appl., 13, 024051(2020).

    [2] C. H. Zeng, W. K. Lin, T. He, Y. K. Zhao, Y. H. Sun, Q. Cui, X. Zhang, S. L. Lu, X. M. Zhang, Y. M. Xu, M. Kong, B. S. Zhang. Ultraviolet-infrared dual-color photodetector based on vertical GaN nanowire array and graphine. Chin. Opt. Lett., 18, 112501(2020).

    [3] X. Y. Zhou, X. Tan, Y. G. Wang, X. B. Song, T. T. Han, J. Li, W. L. Lu, G. D. Gu, S. X. Liang, Y. J. Lu, Z. H. Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area. Chin. Opt. Lett., 17, 090401(2019).

    [4] B. Zhao, F. Wang, H. Y. Chen, Y. P. Wang, M. M. Jiang, X. S. Fang, D. X. Zhao. Solar-blind avalanche photodetector based on single ZnO–Ga2O3 core–shell microwire. Nano. Lett., 15, 3988(2015).

    [5] J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, D. Z. Shen. ZnO-based ultraviolet avalanche photodetectors. J. Phys. D, 46, 305105(2013).

    [6] K. K. Tian, C. S. Chu, J. M. Che, H. Shao, J. Q. Kou, Y. H. Zhang, Z. H. Zhang, T. B. Wei. On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes. Chin. Opt. Lett., 17, 122301(2019).

    [7] Z. G. Shao, D. J. Chen, Y. L. Liu, H. Lu, R. Zhang, Y. D. Zheng, L. Li, K. X. Dong. Significant performance improvement in AlGaN solar-blind avalanche photodiodes by exploiting the built-in polarization electric field. IEEE J. Sel. Top. Quantum Electron., 20, 3803306(2014).

    [8] E. Monroy, F. Calle, J. A. Garrido, P. Youinou, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart. Si-doped AlxGa1-xN photoconductive detectors. Semicond. Sci. Technol., 14, 685(1999).

    [9] H. Jiang, N. Nakata, G. Y. Zhao, H. Ishikawa, C. L. Shao, T. Egawa, T. Jimbo, M. Umeno. Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain. Jpn. J. Appl. Phys., 40, L505(2001).

    [10] S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers. Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors. J. Appl. Phys., 123, 161551(2018).

    [11] F. Xie, H. Lu, D. J. Chen, P. Han, R. Zhang, Y. D. Zheng, L. Li, W. H. Jiang, C. Chen. Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current. Electron. Lett., 47, 930(2011).

    [12] O. Katz, V. Garber, B. Meyler, G. Bahir, J. Salzman. Gain mechanism in GaN Schottky ultraviolet detectors. Appl. Phys. Lett., 79, 1417(2001).

    [13] Y. Xu, X. H. Chen, D. Zhou, F. F. Ren, J. J. Zhou, S. Bai, H. Lu, S. Gu, R. Zhang, Y. D. Zheng, J. D. Ye. Carrier transport and gain mechanisms in β–Ga2O3-based metal–semiconductor–metal solar-blind Schottky photodetectors. IEEE Trans. Electron Devices, 66, 2276(2019).

    [14] H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, A. Ougazzaden. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Appl. Phys. Lett., 99, 221101(2011).

    [15] O. Katz, G. Bahir, J. Salzman. Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors. Appl. Phys. Lett., 84, 4092(2004).

    [16] D. B. Li, X. J. Sun, H. Song, Z. M. Li, Y. R. Chen, G. Q. Miao, H. Jiang. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors. Appl. Phys. Lett., 98, 1541(2011).

    [17] P. K. Rao, B. Park, S. T. Lee, Y. K. Noh, M. D. Kim, J. E. Oh. Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel–Poole emission and deep level studies. J. Appl. Phys., 110, 013716(2011).

    [18] B. S. Simpkins, E. T. Yu, P. Waltereit, J. S. Speck. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride. J. Appl. Phys., 94, 1448(2003).

    [19] S. Rathkanthiwar, A. Kalra, S. V. Solanke, N. Mohta, R. Muralidharan, S. Raghavan, D. N. Nath. Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors. J. Appl. Phys., 121, 164502(2017).

    [20] E. Monroy, F. Calle, E. Munoz, F. Omnès, B. Beaumont, P. Gibart. Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors. J. Electron. Mater., 28, 240(1999).

    [21] N. Youngblood, C. Chen, S. J. Koester, M. Li. Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current. Nat. Photon., 9, 247(2015).

    [22] X. K. Zhou, D. Z. Yang, D. G. Ma, A. Vadim, T. Ahamad, S. M. Alshehri. Ultrahigh gain polymer photodetectors with spectral response from UV to near‐infrared using ZnO nanoparticles as anode interfacial layer. Adv. Funct. Mater., 26, 6619(2016).

    [23] H. Zhang, E. J. Miller, E. T. Yu. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy. J. Appl. Phys., 99, 023703(2006).

    [24] F. C. Chiu. A review on conduction mechanisms in dielectric films. Adv. Mater. Sci. Eng., 2014, 578168(2014).

    [25] E. Arslan, S. Buetuen, E. Ozbay. Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures. Appl. Phy. Lett., 94, 142106(2009).

    [26] J. R. Yeargan, H. L. Taylor. The Poole–Frenkel effect with compensation present. J. Appl. Phys., 39, 5600(1968).

    [27] V. W. L. Chin, T. L. Tansley, T. Osotchan. Electron mobilities in gallium, indium, and aluminum nitrides. J. Appl. Phys., 75, 7365(1994).

    [28] O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J. Phys. Condens. Matter, 14, 3399(2002).

    Data from CrossRef

    [1] Fuxue Wang, Zhong Wang, Shengyao Fan, Meng Li. The effect of structural parameters on AlGaN solar-blind metal–semiconductor-metal (MSM) photodetectors. Optical and Quantum Electronics, 53, 671(2021).

    Zhicheng Dai, Yushen Liu, Guofeng Yang, Feng Xie, Chun Zhu, Yan Gu, Naiyan Lu, Qigao Fan, Yu Ding, Yuhang Li, Yingzhou Yu, Xiumei Zhang. Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content[J]. Chinese Optics Letters, 2021, 19(8): 082504
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