Zhicheng Dai, Yushen Liu, Guofeng Yang, Feng Xie, Chun Zhu, Yan Gu, Naiyan Lu, Qigao Fan, Yu Ding, Yuhang Li, Yingzhou Yu, Xiumei Zhang. Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content[J]. Chinese Optics Letters, 2021, 19(8): 082504
- Chinese Optics Letters
- Vol. 19, Issue 8, 082504 (2021)
Fig. 1. (a) Epitaxial structure of the Al0.55Ga0.45N solar-blind MSM PD. (b) Optical microscopy image of the Al0.55Ga0.45N MSM PD with an area of 200 µm × 200 µm.
Fig. 2. (a) Omega-2theta XRD pattern of the Al0.55Ga0.45N (002) plane. (b) Typical 5 µm × 5 µm AFM image of the AlGaN epitaxial layer. (c), (d) TEM images of the AlGaN/AlN interface.
Fig. 3. (a) Transmission spectrum of Al0.55Ga0.45N active layer. (b) Photo-response spectra of the Al0.55Ga0.45N PD from 2 to 10 V at room temperature on the logarithmic scale.
Fig. 4. I-V curves of the Al0.55Ga0.45N MSM PD in the dark and under 230 nm illumination at 25°C and 150°C. The inset is the breakdown voltage of the PD.
Fig. 5. Temperature-dependent I-V characteristics of the Al0.55Ga0.45N MSM PD in dark conditions.
Fig. 6. (a) Derived ln(IPF/E) versus sqrt(E) curves employing PFE as carrier transport mechanism at high bias voltages. (b) Derived linear fit of parameter m(T) versus q/kT. (c) Linear fit of parameter n(T) versus q/kT. (d) Schematic drawing of the energy band of the metal/AlGaN interface.
Fig. 7. Band diagram in the cross section of the AlGaN photoconductor. The dashed line represents the contraction of the band bending around the dislocation under UV illumination.
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