Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content

Zhicheng Dai; Yushen Liu; Guofeng Yang; Feng Xie; Chun Zhu; Yan Gu; Naiyan Lu; Qigao Fan; Yu Ding; Yuhang Li; Yingzhou Yu; Xiumei Zhang

doi:10.3788/COL202119.082504

Journals >Chinese Optics Letters >Volume 19 >Issue 8 >Page 082504 > Article

Chinese Optics Letters
Vol. 19, Issue 8, 082504 (2021)

Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content

Zhicheng Dai¹, Yushen Liu², Guofeng Yang^1、*, Feng Xie³, Chun Zhu¹, Yan Gu¹, Naiyan Lu¹, Qigao Fan¹, Yu Ding¹, Yuhang Li¹, Yingzhou Yu¹, and Xiumei Zhang¹

Author Affiliations

¹School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China

²School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215556, China

³The 38th Research Institute of China Electronics Technology Group Corporation, Hefei 230000, China

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DOI: 10.3788/COL202119.082504 Cite this Article Set citation alerts

Zhicheng Dai, Yushen Liu, Guofeng Yang, Feng Xie, Chun Zhu, Yan Gu, Naiyan Lu, Qigao Fan, Yu Ding, Yuhang Li, Yingzhou Yu, Xiumei Zhang. Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content[J]. Chinese Optics Letters, 2021, 19(8): 082504 Copy Citation Text

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