Ning Wang. Ohmic contacts for atomically-thin transition metal dichalcogenide semiconductors[J]. Journal of Semiconductors, 2020, 41(7): 070401
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Fig. 1. (Color online) Electrical interface between 2H TMDC and metal lead. (a) Interface band alignment of the van der Waals contact. (b) Interface band alignment of the Schottky-limited contact due to the presence of dangling bonds at the TMDC edge. (c) Interface band alignment of the contact based on the 1T–2H interface through locally induced phase transition. (d) Phase transition from 2H to 1T and 1T’.
Fig. 2. (Color online) (a) Band structure of monolayer MoS2. (b) The crystal structures and corresponding energy splitting diagrams of Mo/W d-orbital states before and after the phase transition. (c) The contact resistance (measured under different gate voltages Vbg) of the 3L-MoS2 FET made by oxygen-plasma-induced phase transition.