[1] R T Tung. Chemical bonding and Fermi level pinning at metal–semiconductor interfaces. Phys Rev Lett, 84, 6078(2020).
[2] X Cui, G H Lee, Y D Kim et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat Nanotechnol, 10, 534(2015).
[3] Y Liu, J Guo, E Zhu et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature, 557, 696(2018).
[4] A Allain, J Kang, K Banerjee. Electrical contacts to two-dimensional semiconductors. Nat Mater, 14, 1195(2015).
[5] R Kappera, D Voiry, S E Yalcin et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat Mater, 13, 1128(2014).
[6] S G Xu, Z F Wu, H H Lu et al. Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides. 2D Mater, 3, 021007(2016).
[7] Z F Wu, S G Xu, H H Lu et al. Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides. Nat Commun, 7, 12955(2016).
[8] S G Xu, J Y Shen, G Long et al. Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2. Phys Rev Lett, 118, 067702(2017).
[9] Z F Wu, B T Zhou, X B Cai et al. Intrinsic valley Hall transport in atomically thin MoS2. Nat Commun, 10, 611(2019).
[10]