Zheng ZHANG, Yan-Hua ZHANG, Dong-Yue JIN, Wei-Cong NA, Hong-Yun XIE. RF power performance improvement of multi-finger power bipolar transistor by non-uniform emitter finger spacing design without the use of emitter ballasting resistor[J]. Journal of Infrared and Millimeter Waves, 2021, 40(3): 329
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 3, 329 (2021)
Fig. 1. The measured emitter-base junction voltage VBE as a function of T under different emitter currents of 3 mA， 1 mA， 100 µA and 10 µA respectively
Fig. 2. The schematic diagram of an N-finger HBT， where REi is the emitter ballasting resistor of the ith emitter finger［8-9］
Fig. 3. The schematic-cross section of a cell in multi-finger HBTs
Fig. 4. Micrographs of the fabricated multi-fingers SiGe HBTs with emitter ballasting resistor.（Note： polysilicon emitter ballasting resistors locate at root terminal of each emitter finger， see the enlarged image）
Fig. 5. Micrograph of the fabricated multi-fingers SiGe HBTs with non-uniform finger spacing
Fig. 6. Measured surface temperature distribution by US QFI Infrared TMS for (a) a multi-finger power HBT with emitter ballasting resistor, and (b)for a multi-finger power HBT with non-uniform finger spacing under IC＝800 mA, VCE＝5 V and case temperature of TC=80 ℃
Fig. 7. The block diagram of RF power measurement system
Fig. 8. RF Output power poutversus RF input power pin for two types of multi-fingers power HBTs with emitter ballasting resistor and with non-uniform emitter finger spacing respectively
Fig. 9. Collector efficiency ηCversus RF input power pin for two types of multi-fingers power HBTs with emitter ballasting resistor and with non-uniform emitter finger spacing respectively.
Fig. 10. Power-added-efficiency（PAE） versus RF input power pin for two types of multi-fingers power HBTs with emitter ballasting resistor and with non-uniform emitter finger spacing respectively
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Table 1. The material parameters of various layers for SiGe HBTs.
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