[1]

[2]

[3]

[4] X Li, X Tong, A Q Huang et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 65, 347(2017).

[5] Y Kobayashi, H Ishimori, A Kinoshita et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 00} for Schottky barrier diode wall integrated trench MOSFET. Jpn J Appl Phys, 56, 04CR08(2017).

[6] Q He, X Luo, T Liao et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 125, 58(2019).

[7] X R Luo, T Liao, J Wei et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 40, 052803(2019).

[8] M Zhang, J Wei, H Jiang et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 17, 432(2017).

[9] K Han, B J Baliga, W Sung. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 39, 248(2017).

[10]

[11] H Jiang, J Wei, X Dai et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 37, 1324(2016).

[12]

[13]

[14]

[15] J Lutz, H Schlangenotto, U Scheuermann et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 24, 599(2011).

[16] X Zhou, R Yue, J Zhang et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 64, 4568(2017).

[17] W Sung, a B J Baliga. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 37, 1605(2016).

[18] W Sung, a B J Baliga. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 64, 8206(2017).