Xiaorong Luo, Ke Zhang, Xu Song, Jian Fang, Fei Yang, Bo Zhang. 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. Journal of Semiconductors, 2020, 41(10): 102801

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- Journal of Semiconductors
- Vol. 41, Issue 10, 102801 (2020)
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