[1]
[2]
[3]
[4]
[5] T H Gfroerer, Y Zhang, M W Wanlass. An extended defect as a sensor for free carrier diffusion in a semiconductor. Appl Phys Lett, 102, 012114(2013).
[6] F Zhang, J F Castaneda, S S Chen et al. Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs. Mater Today, 36, 18(2020).
[7] Y Lin, Y Zhang, Z Q Liu et al. Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence. J Appl Phys, 115, 023103(2014).
[8] P Petroff, R L Hartman. Defect structure introduced during operation of heterojunction GaAs lasers. Appl Phys Lett, 23, 469(1973).
[9] C Kurtsiefer, S Mayer, P Zarda et al. Stable solid-state source of single photons. Phys Rev Lett, 85, 290(2000).
[10] S Francoeur, J F Klem, A Mascarenhas. Optical spectroscopy of single impurity centers in semiconductors. Phys Rev Lett, 93, 067403(2004).
[11] M J Romero, H Du, G Teeter et al. Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In, Ga)Se2 thin films used in photovoltaic applications. Phys Rev B, 84, 165324(2011).
[12] K Alberi, B Fluegel, H Moutinho et al. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging. Nat Commun, 4, 2699(2013).
[13] H N Liu, Y Zhang, Y P Chen et al. Confocal micro-PL mapping of defects in CdTe epilayers grown on Si (211) substrates with different annealing cycles. J Electron Mater, 43, 2854(2014).
[14] B Fluegel, K Alberi, M J DiNezza et al. Carrier decay and diffusion dynamics in single-crystalline CdTe as seen via microphotoluminescence. Phys Rev Applied, 2, 034010(2014).
[15] D Kuciauskas, T H Myers, T M Barnes et al. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures. Appl Phys Lett, 110, 083905(2017).
[16] X Xu, S P Beckman, P Specht et al. Distortion and segregation in a dislocation core region at atomic resolution. Phys Rev Lett, 95, 145501(2005).
[17] D J Smith, T Aoki, J Mardinly et al. Exploring aberration-corrected electron microscopy for compound semiconductors. Microscopy, 62, S65(2013).
[18] C Li, Y L Wu, T J Pennycook et al. Carrier separation at dislocation pairs in CdTe. Phys Rev Lett, 111, 096403(2013).
[19] B Hauer, C E Marvinney, M Lewin et al. Exploiting phonon-resonant near-field interaction for the nanoscale investigation of extended defects. Adv Funct Mater, 30, 1907357(2020).
[20] Q Chen, B S McKeon, S Y Zhang et al. Impact of individual structural defects in GaAs solar cells: A correlative and in operando investigation of signatures, structures, and effects. Adv Opt Mater, 9, 2001487(2021).
[21] Q Chen, B S McKeon, J Becker et al. Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, 3234(2018).
[22] Q Chen, Y Zhang. The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu2ZnSnSe4 thin-film solar cell. Appl Phys Lett, 103, 242104(2013).
[23] C H Lin, T A Merz, D R Doutt et al. Strain and temperature dependence of defect formation at AlGaN/GaN high-electron-mobility transistors on a nanometer scale. IEEE Trans Electron Devices, 59, 2667(2012).
[24] T Park, Y J Guan, Z Q Liu et al. In operando micro-Raman three-dimensional thermometry with diffraction-limit spatial resolution for GaN-based light-emitting diodes. Phys Rev Appl, 10, 034049(2018).
[25] F Chen, Y Zhang, T H Gfroerer et al. Spatial resolution versus data acquisition efficiency in mapping an inhomogeneous system with species diffusion. Sci Rep, 5, 10542(2015).
[26] C Hu, Q Chen, F Chen et al. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering. Light Sci Appl, 7, 23(2018).
[27] G Irmer, M Wenzel, J Monecke. Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra ofp-type GaAs:Zn. Phys Rev B, 56, 9524(1997).
[28] A Mooradian, G B Wright. Observation of the interaction of plasmons with longitudinal optical phonons in GaAs. Phys Rev Lett, 16, 999(1966).
[29]
[30] O Paetzold, G Irmer, J Monecke et al. Micro Raman study of dislocations in n-type doped GaAs. J Raman Spectrosc, 24, 761(1993).
[31] P Martín, J Jiménez, C Frigeri et al. A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques. J Mater Res, 14, 1732(1999).
[32] K S Chang, S C Yang, J Y Kim et al. Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography. Sensors, 12, 4648(2012).
[33] D T Wu, G Busse. Lock-in thermography for nondestructive evaluation of materials. Revue Générale De Thermique, 37, 693(1998).
[34] J Dallas, G Pavlidis, B Chatterjee et al. Thermal characterization of gallium nitride p-i-n diodes. Appl Phys Lett, 112, 073503(2018).
[35] J Senawiratne, Y Li, M Zhu et al. Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes. J Electron Mater, 37, 607(2008).
[36] Y Lin, Y Zhang, Z Liu et al. Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes. Appl Phys Lett, 101, 252103(2012).
[37] P Peri, K Fu, H Q Fu et al. Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure. J Vac Sci Technol A, 38, 063402(2020).
