Author Affiliations
1Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China2Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications, Shanghai 200433, China3Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology, Shanghai 200433, China4National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China5Peng Cheng Laboratory, Shenzhen 518055, China6e-mail:7e-mail:8e-mail:show less
Fig. 1. Benchmark of distance-rate product versus reverse bias voltage for micro-LED-based photodetectors.
Fig. 2. (a) Schematic of the vertical structure of Si-substrate micro-LED-based photodetector; SEM images of (b) 10 μm, (c) 50 μm, and (d) 100 μm chips.
Fig. 3. (a) Schematic of layout for 4×4 Si-substrate micro-LED array; optical microscope images of (b) 10 μm, (c) 50 μm, and (d) 100 μm micro-LED array.
Fig. 4. Responsivity spectra of (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors; electroluminescence spectra of (d) 10 μm, (e) 50 μm, and (f) 100 μm micro-LEDs.
Fig. 5. Current–voltage (I-V) characteristics under the dark condition at (a) reverse bias and (b) forward bias; (c) photocurrent versus incident light power under the illumination of 450 nm light at −20 V.
Fig. 6. Experimental setup of VLC system utilizing micro-LED-based photodetector.
Fig. 7. Measured forward transmission gains of (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors; (d) 10 and 20 dB bandwidths versus reverse bias.
Fig. 8. SNR versus reverse bias for (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors.
Fig. 9. Data rate versus bias current and signal Vpp for (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors.
Fig. 10. (a) Data rate versus reverse bias; (b) data rate versus incident light power for 10, 50, and 100 μm micro-LED-based photodetectors.
Fig. 11. Measured electrical spectra for (a) 10 μm, (b) 50 μm, and (c) 100 μm micro-LED-based photodetectors; maximum data rate and BER versus baudrate at 0.5 m for (d) 10 μm, (e) 50 μm, and (f) 100 μm micro-LED-based photodetectors.
Fig. 12. Data rate and BER versus transmission distance for 50 μm micro-LED-based photodetector.
Fig. 13. SNR and bit number versus frequency at 1.9 Gbaud for (a) 0.5 m and (b) 1 m transmission distance; power ratio versus frequency for (c) 0.5 m and (d) 1 m.
| Capacitance |
---|
Bias | 10 μm | 50 μm | 100 μm |
---|
0 V | 43.8 pF | 92.6 pF | 196.6 pF | | 42.5 pF | 68.7 pF | 137.4 pF | | 42.2 pF | 61.0 pF | 111.5 pF | | 42.1 pF | 59.8 pF | 108.0 pF |
|
Table 1. Capacitance versus Voltage of Micro-LED-Based Photodetectors
Year | Substrate | Array | Bias | Peak Response Wavelength | FWHM | Modulation Format | Data Rate (Gbps) | Distance | Reference |
---|
2018 | Sapphire | – | −3 V | 392 nm | 34 nm | OFDM | 3.2 | 0.5 m fiber and 0.1 m free space | [17] | 2019 | Sapphire | Not mentioned | −5 V | 405 nm | – | OOK | 0.35 | 1 m free space | [26] | 2019 | GaN | – | −10 V | 400 nm | 40 nm | OOK | 1.55 | 1 m free space | [27] | 2020 | GaN | – | −8 V | 400 nm | 60 nm | BPL-OFDM | 7.4 | 1 m free space | [28] | 2021 | Sapphire | Not mentioned | −5 V | – | – | OOK | 0.06 | 2.3 m underwater | [29] | 2021 | Sapphire | | −5 V | – | – | OOK | 0.3 | 1.25 m free space | [30] | 2021 | Sapphire | | −5 V | – | – | OOK | 0.54 | 1.1 m free space | [31] | 2022 | Si | | −20 V | 425 nm | – | BPL-OFDM | 8.205 | 0.5 m free space | [36] | 2022 | Si | | −20 V | 400 nm | 72 nm | BPL-DMT | 10.14 | 1 m free space | This work |
|
Table 2. Recent Achievements of Micro-LED-Based Photodetectors