Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication

Jianyang Shi; Zengyi Xu; Wenqing Niu; Dong Li; Xiaoming Wu; Ziwei Li; Junwen Zhang; Chao Shen; Guangxu Wang; Xiaolan Wang; Jianli Zhang; Fengyi Jiang; Shaohua Yu; Nan Chi

doi:10.1364/PRJ.465455

Journals >Photonics Research >Volume 10 >Issue 10 >Page 2394 > Article

Photonics Research
Vol. 10, Issue 10, 2394 (2022)

Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication | Spotlight on Optics

Jianyang Shi^1、2、3, Zengyi Xu¹, Wenqing Niu¹, Dong Li¹, Xiaoming Wu⁴, Ziwei Li^{1、2、3、5}, Junwen Zhang^{1、2、3、5}, Chao Shen^{1、2、3、5、6、*}, Guangxu Wang⁴, Xiaolan Wang⁴, Jianli Zhang^4、7、*, Fengyi Jiang⁴, Shaohua Yu⁵, and Nan Chi^{1、2、3、8、*}

Author Affiliations

¹Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China

²Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications, Shanghai 200433, China

³Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology, Shanghai 200433, China

⁴National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

⁵Peng Cheng Laboratory, Shenzhen 518055, China

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DOI: 10.1364/PRJ.465455 Cite this Article Set citation alerts

Jianyang Shi, Zengyi Xu, Wenqing Niu, Dong Li, Xiaoming Wu, Ziwei Li, Junwen Zhang, Chao Shen, Guangxu Wang, Xiaolan Wang, Jianli Zhang, Fengyi Jiang, Shaohua Yu, Nan Chi. Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication[J]. Photonics Research, 2022, 10(10): 2394 Copy Citation Text

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