[1] X. You, C.-X. Wang, J. Huang, X. Gao, Z. Zhang, M. Wang, Y. Huang, C. Zhang, Y. Jiang, J. Wang. Towards 6G wireless communication networks: vision, enabling technologies, and new paradigm shifts. Sci. China Inf. Sci., 64, 110301(2021).
[2] M. Latva-aho, K. Leppänen, F. Clazzer, A. Munari. Key Drivers and Research Challenges for 6G Ubiquitous Wireless Intelligence(2019).
[3] N. Chi, H. Haas, M. Kavehrad, T. D. Little, X.-L. Huang. Visible light communications: demand factors, benefits and opportunities [Guest Editorial]. IEEE Wireless Commun., 22, 5-7(2015).
[4] N. Chi, Y. Zhou, Y. Wei, F. Hu. Visible light communication in 6G: advances, challenges, and prospects. IEEE Veh. Technol. Mag., 15, 93-102(2020).
[5] B. Zong, C. Fan, X. Wang, X. Duan, B. Wang, J. Wang. 6G technologies: key drivers, core requirements, system architectures, and enabling technologies. IEEE Veh. Technol. Mag., 14, 18-27(2019).
[6] R. Bian, I. Tavakkolnia, H. Haas. 15.73 Gb/s visible light communication with off-the-shelf LEDs. J. Lightwave Technol., 37, 2418-2424(2019).
[7] E. Xie, R. Bian, X. He, M. S. Islim, C. Chen, J. J. McKendry, E. Gu, H. Haas, M. D. Dawson. Over 10 Gbps VLC for long-distance applications using a GaN-based series-biased micro-LED array. IEEE Photon. Technol. Lett., 32, 499-502(2020).
[8] F. Hu, S. Chen, G. Li, P. Zou, J. Zhang, J. Hu, J. Zhang, Z. He, S. Yu, F. Jiang. Si-substrate LEDs with multiple superlattice interlayers for beyond 24 Gbps visible light communication. Photon. Res., 9, 1581-1591(2021).
[9] D. Li, C. Ma, J. Wang, F. Hu, Y. Hou, S. Wang, J. Hu, S. Yi, Y. Ma, J. Shi. High-speed GaN-based superluminescent diode for 4.57 Gbps visible light communication. Crystals, 12, 191(2022).
[10] C. Shen, C. Lee, T. K. Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, B. S. Ooi. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Opt. Express, 24, 20281-20286(2016).
[11] F. Hu, J. A. Holguin-Lerma, Y. Mao, P. Zou, C. Shen, T. K. Ng, B. S. Ooi, N. Chi. Demonstration of a low-complexity memory-polynomial-aided neural network equalizer for CAP visible-light communication with superluminescent diode. Opto-Electron. Adv., 3, 200009(2020).
[12] J. Hu, F. Hu, J. Jia, G. Li, J. Shi, J. Zhang, Z. Li, N. Chi, S. Yu, C. Shen. 46.4 Gbps visible light communication system utilizing a compact tricolor laser transmitter. Opt. Express, 30, 4365-4373(2022).
[13] W.-C. Wang, C.-H. Cheng, H.-Y. Wang, G.-R. Lin. White-light color conversion with red/green/violet laser diodes and yellow light-emitting diode mixing for 34.8 Gbit/s visible lighting communication. Photon. Res., 8, 1398-1408(2020).
[14] J. Lavrencik, S. Varughese, V. A. Thomas, G. Landry, Y. Sun, R. Shubochkin, K. Balemarthy, J. Tatum, S. E. Ralph. 4λ × 100 Gbps VCSEL PAM-4 transmission over 105 m of wide band multimode fiber. Optical Fiber Communication Conference, Tu2B.6(2017).
[15] T.-C. Wu, Y.-C. Chi, H.-Y. Wang, C.-T. Tsai, G.-R. Lin. Blue laser diode enables underwater communication at 12.4 Gbps. Sci. Rep., 7, 1(2017).
[16] X. Liu, S. Yi, X. Zhou, Z. Fang, Z.-J. Qiu, L. Hu, C. Cong, L. Zheng, R. Liu, P. Tian. 34.5 m underwater optical wireless communication with 2.70 Gbps data rate based on a green laser diode with NRZ-OOK modulation. Opt. Express, 25, 27937-27947(2017).
[17] K.-T. Ho, R. Chen, G. Liu, C. Shen, J. Holguin-Lerma, A. A. Al-Saggaf, T. K. Ng, M.-S. Alouini, J.-H. He, B. S. Ooi. 3.2 Gigabit-per-second visible light communication link with InGaN/GaN MQW micro-photodetector. Opt. Express, 26, 3037-3045(2018).
[18] D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. Sanchez, J. Diaz, M. Razeghi. High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN. Appl. Phys. Lett., 74, 762-764(1999).
[19] Y.-K. Su, Y.-Z. Chiou, F.-S. Juang, S.-J. Chang, J.-K. Sheu. GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals. Jpn. J. Appl. Phys., 40, 2996-2999(2001).
[20] J. Carrano, T. Li, D. Brown, P. Grudowski, C. Eiting, R. Dupuis, J. Campbell. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN. Appl. Phys. Lett., 73, 2405-2407(1998).
[21] B. Butun, T. Tut, E. Ulker, T. Yelboga, E. Ozbay. High-performance visible-blind GaN-based p-i-n photodetectors. Appl. Phys. Lett., 92, 033507(2008).
[22] G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg. High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures. Appl. Phys. Lett., 71, 2154-2156(1997).
[23] E. Miyazaki, S. Itami, T. Araki. Using a light-emitting diode as a high-speed, wavelength selective photodetector. Rev. Sci. Instrum., 69, 3751-3754(1998).
[24] B. Alshehri, K. Dogheche, S. Belahsene, A. Ramdane, G. Patriarche, D. Decoster, E. Dogheche. Dynamic characterization of III-nitride-based high-speed photodiodes. IEEE Photon. J., 9, 6803107(2017).
[25] C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, B. S. Ooi. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system. Appl. Phys. Express, 10, 042201(2017).
[26] X. Liu, R. Lin, H. Chen, S. Zhang, Z. Qian, G. Zhou, X. Chen, X. Zhou, L. Zheng, R. Liu. High-bandwidth InGaN self-powered detector arrays toward MIMO visible light communication based on micro-LED arrays. ACS Photon., 6, 3186-3195(2019).
[27] C. H. Kang, G. Liu, C. Lee, O. Alkhazragi, J. M. Wagstaff, K.-H. Li, F. Alhawaj, T. K. Ng, J. S. Speck, S. Nakamura. Semipolar (2021¯) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication. Appl. Phys. Express, 13, 014001(2019).
[28] O. Alkhazragi, C. H. Kang, M. Kong, G. Liu, C. Lee, K.-H. Li, H. Zhang, J. M. Wagstaff, F. Alhawaj, T. K. Ng. 7.4-Gbit/s visible-light communication utilizing wavelength-selective semipolar micro-photodetector. IEEE Photon. Technol. Lett., 32, 767-770(2020).
[29] R. Lin, X. Liu, G. Zhou, Z. Qian, X. Cui, P. Tian. InGaN Micro-LED array enabled advanced underwater wireless optical communication and underwater charging. Adv. Opt. Mater., 9, 2002211(2021).
[30] Y.-H. Chang, F.-J. Liou, W. H. Gunawan, C.-W. Chow, Y. Liu, H.-C. Kuo, C.-H. Yeh. High bandwidth semipolar (20-21) μ-LED serving as photo-receiver for visible light communication. European Conference on Optical Communication (ECOC), 1-4(2021).
[31] Y.-H. Chang, T.-C. Hsu, F.-J. Liou, C.-W. Chow, Y. Liu, H.-C. Kuo, C.-H. Yeh, P.-H. Yang. High-bandwidth InGaN/GaN semipolar micro-LED acting as a fast photodetector for visible light communications. Opt. Express, 29, 37245-37252(2021).
[32] A. T. Hussein, J. M. Elmirghani. 10 Gbps mobile visible light communication system employing angle diversity, imaging receivers, and relay nodes. J. Opt. Commun. Netw., 7, 718-735(2015).
[33] C. Xiong, F. Jiang, W. Fang, L. Wang, H. Liu, C. Mo. Different properties of GaN-based LED grown on Si (111) and transferred onto new substrate. Sci. China Ser. E, 49, 313-321(2006).
[34] Y. Zhou, X. Zhu, F. Hu, J. Shi, F. Wang, P. Zou, J. Liu, F. Jiang, N. Chi. Common-anode LED on a Si substrate for beyond 15 Gbit/s underwater visible light communication. Photon. Res., 7, 1019-1029(2019).
[35] K. Saron, M. Hashim, M. Farrukh. Growth of GaN films on silicon (1 1 1) by thermal vapor deposition method: optical functions and MSM UV photodetector applications. Superlattices Microstruct., 64, 88-97(2013).
[36] W. Niu, J. Shi, Z. Xu, D. Li, W. Xiao, G. Wang, J. Zhang, Z. He, C. Shen, N. Chi. 8.205-Gbit/s visible light communication utilizing 4 × 4 Si-substrate μLED-based photodetector array. Optical Fiber Communication Conference, Tu3C.2(2022).
[37] A. Krost, A. Dadgar. GaN-based optoelectronics on silicon substrates. Mater. Sci. Eng. B, 93, 77-84(2002).
[38] F. Jiang, J. Liu, L. Wang, C. Xiong, W. Fang, C. Mo, Y. Tang, G. Wang, L. Xu, J. Ding. High optical efficiency GaN based blue LED on silicon substrate. Sci. Sin. Phys. Mech. Astron., 45, 067302(2015).
[39] Z. Quan, J. Liu, F. Fang, G. Wang, F. Jiang. Effect of V-shaped pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes. Opt. Quantum Electron., 48, 195(2016).
[40] Z. Quan, L. Wang, C. Zheng, J. Liu, F. Jiang. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J. Appl. Phys., 116, 183107(2014).
[41] G. Wang, C. Xiong, J. Liu, F. Jiang. Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (1 1 1). Appl. Surf. Sci., 257, 8675-8678(2011).
[42] F. Jiang, L. Wang, W. Fang. Semiconductor light-emitting device and method for making same. U.S. patent(2011).
[43] K. Wada, H. Yoshioka, J. Zhu, T. Matsuyama, H. Horinaka. Simple form of multimode laser diode rate equations incorporating the band filling effect. Opt. Express, 19, 3019-3036(2011).
[44] J. Campello. Practical bit loading for DMT. IEEE International Conference on Communications, 801-805(1999).
[45] J. Campello. Optimal discrete bit loading for multicarrier modulation systems. IEEE International Symposium on Information Theory, 193(1998).
[46] X. Huang, J. Shi, J. Li, Y. Wang, N. Chi. A Gb/s VLC transmission using hardware preequalization circuit. IEEE Photon. Technol. Lett., 27, 1915-1918(2015).
[47] X. Huang, S. Chen, Z. Wang, Y. Wang, N. Chi. 1.2 Gbit/s visible light transmission based on orthogonal frequency-division multiplexing using a phosphorescent white light-emitting diode and a pre-equalization circuit. Chin. Opt. Lett., 13, 100602(2015).
[48] X. Huang, Z. Wang, J. Shi, Y. Wang, N. Chi. 1.6 Gbit/s phosphorescent white LED based VLC transmission using a cascaded pre-equalization circuit and a differential outputs PIN receiver. Opt. Express, 23, 22034-22042(2015).
[49] X. Huang, S. Chen, Z. Wang, J. Shi, Y. Wang, J. Xiao, N. Chi. 2.0-Gb/s visible light link based on adaptive bit allocation OFDM of a single phosphorescent white LED. IEEE Photon. J., 7, 7904008(2015).
[50] R. A. Shafik, M. S. Rahman, A. R. Islam. On the extended relationships among EVM, BER and SNR as performance metrics. International Conference on Electrical and Computer Engineering (ICECE), 408-411(2006).
[51] F. Xue, L. Yang, M. Chen, J. Chen, X. Yang, L. Wang, L. Chen, C. Pan, Z. L. Wang. Enhanced photoresponsivity of the MoS2-GaN heterojunction diode via the piezo-phototronic effect. NPG Asia Mater., 9, e418(2017).
[52] P. Zou, Y. Zhao, F. Hu, N. Chi. Underwater visible light communication at 3.24 Gb/s using novel two-dimensional bit allocation. Opt. Express, 28, 11319-11338(2020).
