Min Wu, Weida Hong, Guanyu Liu, Jiejun Zhang, Ziao Tian, Miao Zhang. Double-balanced mixer based on monolayer graphene field-effect transistors[J]. Journal of Semiconductors, 2022, 43(5): 052002

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- Journal of Semiconductors
- Vol. 43, Issue 5, 052002 (2022)

Fig. 1. (Color online) (a) Schematic of top-gated Al2O3/monolayer graphene FET. (b) Photograph of a dual-finger gate 5-µ m-length and 70-µ m-wide graphene FET. (c) Measured data for the I ds–V gs characteristic curves at V ds = 0.1 to 1 V. (d) Current gain, |H 21|, and unilateral gain, U , with de-embedding at V ds = 0.8 V.

Fig. 2. Large-signal model of a GFET. C pd, C pg, L g, L d and L s are pad parasitic capacitance values and inductances, R g is the gate resistance, and R s and R d are the source and drain resistances including contact and access resistances.

Fig. 3. (Color online) Model versus measured data for the I ds–V ds characteristic curves at V gs = –3 to 3 V.

Fig. 4. Schematic of the GFET double-balanced mixer.

Fig. 5. (Color online) RF performance of the double-balanced mixer. (a) Simulation result of conversion gain. (b) Simulation result of –1 dB compress point. (c) Simulated two-tone spectrum of the mixer. (d) Simulation result of IIP3.
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Table 1. GFET large-signal model parameters.
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Table 2. Comparison between performance parameters of GFET and CMOS mixer.

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