• Journal of Semiconductors
  • Vol. 43, Issue 5, 052002 (2022)
Min Wu1, Weida Hong2, Guanyu Liu2, Jiejun Zhang2..., Ziao Tian2 and Miao Zhang2|Show fewer author(s)
Author Affiliations
  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230022, China
  • 2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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    DOI: 10.1088/1674-4926/43/5/052002 Cite this Article
    Min Wu, Weida Hong, Guanyu Liu, Jiejun Zhang, Ziao Tian, Miao Zhang. Double-balanced mixer based on monolayer graphene field-effect transistors[J]. Journal of Semiconductors, 2022, 43(5): 052002 Copy Citation Text show less
    (Color online) (a) Schematic of top-gated Al2O3/monolayer graphene FET. (b) Photograph of a dual-finger gate 5-µm-length and 70-µm-wide graphene FET. (c) Measured data for the Ids–Vgs characteristic curves at Vds = 0.1 to 1 V. (d) Current gain, |H21|, and unilateral gain, U, with de-embedding at Vds = 0.8 V.
    Fig. 1. (Color online) (a) Schematic of top-gated Al2O3/monolayer graphene FET. (b) Photograph of a dual-finger gate 5-µm-length and 70-µm-wide graphene FET. (c) Measured data for the IdsVgs characteristic curves at Vds = 0.1 to 1 V. (d) Current gain, |H21|, and unilateral gain, U, with de-embedding at Vds = 0.8 V.
    Large-signal model of a GFET. Cpd, Cpg, Lg, Ld and Ls are pad parasitic capacitance values and inductances, Rg is the gate resistance, and Rs and Rd are the source and drain resistances including contact and access resistances.
    Fig. 2. Large-signal model of a GFET. Cpd, Cpg, Lg, Ld and Ls are pad parasitic capacitance values and inductances, Rg is the gate resistance, and Rs and Rd are the source and drain resistances including contact and access resistances.
    (Color online) Model versus measured data for the Ids–Vds characteristic curves at Vgs = –3 to 3 V.
    Fig. 3. (Color online) Model versus measured data for the IdsVds characteristic curves at Vgs = –3 to 3 V.
    Schematic of the GFET double-balanced mixer.
    Fig. 4. Schematic of the GFET double-balanced mixer.
    (Color online) RF performance of the double-balanced mixer. (a) Simulation result of conversion gain. (b) Simulation result of –1 dB compress point. (c) Simulated two-tone spectrum of the mixer. (d) Simulation result of IIP3.
    Fig. 5. (Color online) RF performance of the double-balanced mixer. (a) Simulation result of conversion gain. (b) Simulation result of –1 dB compress point. (c) Simulated two-tone spectrum of the mixer. (d) Simulation result of IIP3.
    ParameterValueParameterValue
    Cgs327 fFLg83 pH
    Cgd8 fFRg30 Ω
    Cds15 fFR0326 Ω
    Cpd32 fFRext026 Ω
    Cpg35 fFμe1108 cm2/(V·s)
    Ls25 pHμh2080 cm2/(V·s)
    Ld39 pHVdirac–0.2 V
    Table 1. GFET large-signal model parameters.
    Ref.This work[29] [30] [31] [32] [33] [12] [28] [11]
    TypeSim.Meas.Meas.Meas.Sim.Sim.Meas.Meas.Meas.
    Tech. ( μm) GFET, 5 CMOS, 0.18CMOS, 0.065 CMOS, 0.032 CMOS, 0.18 CMOS, 0.18 GFET, 2 GFET, 1.5 GFET, 1
    Freq. (GHz)0.32–1210102.43.350.011.592
    Gain (dB)–2311–13.3–1.6115.81.7–40–53–22
    IIP3 (dBm)24.5–8 to –6.81512.61.4–1.513.812.74.9
    Table 2. Comparison between performance parameters of GFET and CMOS mixer.
    Min Wu, Weida Hong, Guanyu Liu, Jiejun Zhang, Ziao Tian, Miao Zhang. Double-balanced mixer based on monolayer graphene field-effect transistors[J]. Journal of Semiconductors, 2022, 43(5): 052002
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