Fig. 17. Schematic of mask defect inspection system with concurrent transmission and reflection image acquisition using 199 nm continuous wave laser [99]
Since a single wavelength is used,no assumption about dielectric functions of the sample materials is required in data analysis.
Structural pitch can be measured simultaneously for the scattering-angle-resolved scatterometry.
Relatively easy to extend to short wavelength ranges,such as EUV and X-ray.
Contain moving components for the 2-θ scatterometry as well as some scattering-angle-resolved scatterometry techniques using goniometers,which will limit the measurement speed.
Large experimental setup,especially for the scattering-angle-resolved scatterometry.
Spectroscopic scatterometry
Measurement can be very fast,especially for the spectroscopic reflectometry based scatterometry.
Very high vertical resolution(sub-nm)for the ellipsometric scatterometry.
More measurement information can be acquired,especially for the MME-based scatterometry,which is beneficial for parameter decorrelation in data analysis.
Need to pre-determine optical constants of sample materials in a broad spectral range.
Need achromatic optical components and detectors with broad spectral responsivity.
Need delicate calibrations for accurate measurement,especially in the ellipsometric scatterometry.
Table 1. Characteristics of angular scatterometry and spectroscopic scatterometry [6]