• Laser & Optoelectronics Progress
  • Vol. 59, Issue 9, 0922025 (2022)
Xiuguo Chen*, Cai Wang, Tianjuan Yang, Jiamin Liu, Chengfeng Luo, and Shiyuan Liu**
Author Affiliations
  • State Key Laboratory of Digital Manufacturing and Equipment, Huazhong University of Science and Technology, Wuhan 430074, Hubei , China
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    DOI: 10.3788/LOP202259.0922025 Cite this Article Set citation alerts
    Xiuguo Chen, Cai Wang, Tianjuan Yang, Jiamin Liu, Chengfeng Luo, Shiyuan Liu. Inline Optical Measurement and Inspection for IC Manufacturing: State-of-the-Art, Challenges, and Perspectives[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922025 Copy Citation Text show less
    Target gratings in the scribe lines of IC chips [4]
    Fig. 1. Target gratings in the scribe lines of IC chips [4]
    Overview of the principle of optical scatterometry [6]
    Fig. 2. Overview of the principle of optical scatterometry [6]
    Schematic of different scatterometric setups. (a) (b) Angular scatterometers; (c) (d) spectroscopic scatterometers [6]
    Fig. 3. Schematic of different scatterometric setups. (a) (b) Angular scatterometers; (c) (d) spectroscopic scatterometers [6]
    Grating structure. (a) Diffraction of light incident on the rectangular grating structure;(b) hierarchical approximation of arbitrary planar grating structures [6]
    Fig. 4. Grating structure. (a) Diffraction of light incident on the rectangular grating structure;(b) hierarchical approximation of arbitrary planar grating structures [6]
    Parameter extraction process based on nonlinear regression and library search methods [45]
    Fig. 5. Parameter extraction process based on nonlinear regression and library search methods [45]
    Commonly used IBO marks [53-55]. (a) Frame-in-Frame; (b) Box-in-Box; (c) Bar-in-Bar; (d) advanced imaging metrology; (e) Blossom mark
    Fig. 6. Commonly used IBO marks [53-55]. (a) Frame-in-Frame; (b) Box-in-Box; (c) Bar-in-Bar; (d) advanced imaging metrology; (e) Blossom mark
    Typical overlay marks in eDBO technology (a) Top view; (b) cross-section view along the x-direction
    Fig. 7. Typical overlay marks in eDBO technology (a) Top view; (b) cross-section view along the x-direction
    Angular scatterometer for measuring the intensity difference between the positive and negative first-order diffraction light [56]
    Fig. 8. Angular scatterometer for measuring the intensity difference between the positive and negative first-order diffraction light [56]
    Schematic of the monochromatic phase-shifting interferometer [67]
    Fig. 9. Schematic of the monochromatic phase-shifting interferometer [67]
    Schematic of laser scattering confocal microscope [70]
    Fig. 10. Schematic of laser scattering confocal microscope [70]
    Schematic of the Surfscan SP1 inspection system from KLA Corporation [74]
    Fig. 11. Schematic of the Surfscan SP1 inspection system from KLA Corporation [74]
    Schematic of the common-path interferometric microscope [84]
    Fig. 12. Schematic of the common-path interferometric microscope [84]
    Schematic of the through-focus scanning microscope [87]
    Fig. 13. Schematic of the through-focus scanning microscope [87]
    Defect inspection based on mechanical work and force [88]
    Fig. 14. Defect inspection based on mechanical work and force [88]
    Schematic of typical defect inspection based on bright field microscopy [90]
    Fig. 15. Schematic of typical defect inspection based on bright field microscopy [90]
    Simulation method for sensitivity of defection inspection based on bright field microscopy [94]
    Fig. 16. Simulation method for sensitivity of defection inspection based on bright field microscopy [94]
    Schematic of mask defect inspection system with concurrent transmission and reflection image acquisition using 199 nm continuous wave laser [99]
    Fig. 17. Schematic of mask defect inspection system with concurrent transmission and reflection image acquisition using 199 nm continuous wave laser [99]
    Schematic of the scanning lensless imaging microscope [110]
    Fig. 18. Schematic of the scanning lensless imaging microscope [110]
    IC device technology node development trend [112]
    Fig. 19. IC device technology node development trend [112]
    Dielectric function of silicon as a function of (a) film thickness and (b) nanowire size [113]
    Fig. 20. Dielectric function of silicon as a function of (a) film thickness and (b) nanowire size [113]
    CD-SAXS. (a)Schematic of transmission SAXS; (b) schematic of grazing-incidence SAXS [113]
    Fig. 21. CD-SAXS. (a)Schematic of transmission SAXS; (b) schematic of grazing-incidence SAXS [113]
    TechniqueProsCons
    Angular scatterometry

    Since a single wavelength is used,no assumption about dielectric functions of the sample materials is required in data analysis.

    Structural pitch can be measured simultaneously for the scattering-angle-resolved scatterometry.

    Relatively easy to extend to short wavelength ranges,such as EUV and X-ray.

    Contain moving components for the 2-θ scatterometry as well as some scattering-angle-resolved scatterometry techniques using goniometers,which will limit the measurement speed.

    Large experimental setup,especially for the scattering-angle-resolved scatterometry.

    Spectroscopic scatterometry

    Measurement can be very fast,especially for the spectroscopic reflectometry based scatterometry.

    Very high vertical resolution(sub-nm)for the ellipsometric scatterometry.

    More measurement information can be acquired,especially for the MME-based scatterometry,which is beneficial for parameter decorrelation in data analysis.

    Need to pre-determine optical constants of sample materials in a broad spectral range.

    Need achromatic optical components and detectors with broad spectral responsivity.

    Need delicate calibrations for accurate measurement,especially in the ellipsometric scatterometry.

    Table 1. Characteristics of angular scatterometry and spectroscopic scatterometry [6]
    Xiuguo Chen, Cai Wang, Tianjuan Yang, Jiamin Liu, Chengfeng Luo, Shiyuan Liu. Inline Optical Measurement and Inspection for IC Manufacturing: State-of-the-Art, Challenges, and Perspectives[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922025
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