• Acta Optica Sinica
  • Vol. 41, Issue 5, 0516004 (2021)
Minmin Rong1, Yijun Zhang1、*, Shiman Li1, Gangcheng Jiao2, Weixin Liu3, Ziheng Wang1, Zhaoxin Shu1, and Yunsheng Qian1
Author Affiliations
  • 1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China
  • 2Science and Technology on Low-Light-Level Night Vision Laboratory, Xi′an, Shaanxi 710065, China
  • 3No. 808 Institute, Shanghai Academy of Spacecraft Technology, Shanghai 201109, China
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    DOI: 10.3788/AOS202141.0516004 Cite this Article Set citation alerts
    Minmin Rong, Yijun Zhang, Shiman Li, Gangcheng Jiao, Weixin Liu, Ziheng Wang, Zhaoxin Shu, Yunsheng Qian. InGaAs Surface Cleaning Based on Scanning Focused XPS Technique[J]. Acta Optica Sinica, 2021, 41(5): 0516004 Copy Citation Text show less
    Surface SXI and optical microscope images for sample 1. (a) SXI image; (b) optical microscope image
    Fig. 1. Surface SXI and optical microscope images for sample 1. (a) SXI image; (b) optical microscope image
    XPS spectra of elements in micro-areas 1-1 and 1-2. (a) Ga2p3; (b) As2p3; (c) In3d
    Fig. 2. XPS spectra of elements in micro-areas 1-1 and 1-2. (a) Ga2p3; (b) As2p3; (c) In3d
    XPS fitted spectra of Ga2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
    Fig. 3. XPS fitted spectra of Ga2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
    XPS fitted spectra of As2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
    Fig. 4. XPS fitted spectra of As2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
    XPS fitted spectra of In3d for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
    Fig. 5. XPS fitted spectra of In3d for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
    XPS spectra of C1s and O1s for different samples. (a) C1s; (b) O1s
    Fig. 6. XPS spectra of C1s and O1s for different samples. (a) C1s; (b) O1s
    XPS spectra of C1s and O1s for different sample after different cleaning steps. (a) C1s; (b) O1s
    Fig. 7. XPS spectra of C1s and O1s for different sample after different cleaning steps. (a) C1s; (b) O1s
    XPS fitted spectra of Ga2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
    Fig. 8. XPS fitted spectra of Ga2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
    XPS fitted spectra of As2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
    Fig. 9. XPS fitted spectra of As2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
    XPS fitted spectra of In3d for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
    Fig. 10. XPS fitted spectra of In3d for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
    SampleC1sO1Ga-InAsGa2O3As-InGaAsAs2O3In-GaAsIn2O3
    Uncleaned sample33.0540.167.725.581.621.125.043.082.64
    Sample 128.3119.9918.692.1812.0210.580.706.061.47
    Sample 228.1221.2019.084.2413.115.900.875.731.75
    Sample 328.7710.3222.182.3415.5511.480.348.280.74
    Table 1. XPS fitted peak ratios of surface micro-area elements for different samplesunit: %
    SampleC1sO1sGa-InAsGa2O3As-InGaAsAs2O3As2O5In-GaAsIn2O3
    Uncleaned sample 433.0540.167.725.581.621.125.0403.082.64
    Sample 4 afterUV-ozone cleaning7.1062.942.2511.700.314.764.841.790.603.72
    Sample 4 afterdegreasing cleaning21.9349.584.8912.700.621.433.5001.034.34
    Sample 4 after solventetching by HCl and IPA15.918.7826.171.4121.0918.850.2807.200.31
    Sample 3 after solventetching by HCl and IPA28.7710.3222.182.3415.5511.480.3408.280.74
    Table 2. XPS fitted peak ratios of surface micro-area elements for different samples after different cleaning stepsunit: %
    Minmin Rong, Yijun Zhang, Shiman Li, Gangcheng Jiao, Weixin Liu, Ziheng Wang, Zhaoxin Shu, Yunsheng Qian. InGaAs Surface Cleaning Based on Scanning Focused XPS Technique[J]. Acta Optica Sinica, 2021, 41(5): 0516004
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