Author Affiliations
1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China2Science and Technology on Low-Light-Level Night Vision Laboratory, Xi′an, Shaanxi 710065, China3No. 808 Institute, Shanghai Academy of Spacecraft Technology, Shanghai 201109, Chinashow less
Fig. 1. Surface SXI and optical microscope images for sample 1. (a) SXI image; (b) optical microscope image
Fig. 2. XPS spectra of elements in micro-areas 1-1 and 1-2. (a) Ga2p3; (b) As2p3; (c) In3d
Fig. 3. XPS fitted spectra of Ga2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
Fig. 4. XPS fitted spectra of As2p3 for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
Fig. 5. XPS fitted spectra of In3d for different samples. (a) Uncleaned sample; (b) sample 1; (c) sample 2; (d) sample 3
Fig. 6. XPS spectra of C1s and O1s for different samples. (a) C1s; (b) O1s
Fig. 7. XPS spectra of C1s and O1s for different sample after different cleaning steps. (a) C1s; (b) O1s
Fig. 8. XPS fitted spectra of Ga2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
Fig. 9. XPS fitted spectra of As2p3 for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
Fig. 10. XPS fitted spectra of In3d for sample 4 after different cleaning steps. (a) Uncleaning; (b) UV-ozone cleaning; (c) degreasing cleaning; (d) etching based on HCl and IPA mixed solution
Sample | C1s | O1 | Ga-InAs | Ga2O3 | As-InGa | As | As2O3 | In-GaAs | In2O3 |
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Uncleaned sample | 33.05 | 40.16 | 7.72 | 5.58 | 1.62 | 1.12 | 5.04 | 3.08 | 2.64 | Sample 1 | 28.31 | 19.99 | 18.69 | 2.18 | 12.02 | 10.58 | 0.70 | 6.06 | 1.47 | Sample 2 | 28.12 | 21.20 | 19.08 | 4.24 | 13.11 | 5.90 | 0.87 | 5.73 | 1.75 | Sample 3 | 28.77 | 10.32 | 22.18 | 2.34 | 15.55 | 11.48 | 0.34 | 8.28 | 0.74 |
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Table 1. XPS fitted peak ratios of surface micro-area elements for different samplesunit: %
Sample | C1s | O1s | Ga-InAs | Ga2O3 | As-InGa | As | As2O3 | As2O5 | In-GaAs | In2O3 |
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Uncleaned sample 4 | 33.05 | 40.16 | 7.72 | 5.58 | 1.62 | 1.12 | 5.04 | 0 | 3.08 | 2.64 | Sample 4 afterUV-ozone cleaning | 7.10 | 62.94 | 2.25 | 11.70 | 0.31 | 4.76 | 4.84 | 1.79 | 0.60 | 3.72 | Sample 4 afterdegreasing cleaning | 21.93 | 49.58 | 4.89 | 12.70 | 0.62 | 1.43 | 3.50 | 0 | 1.03 | 4.34 | Sample 4 after solventetching by HCl and IPA | 15.91 | 8.78 | 26.17 | 1.41 | 21.09 | 18.85 | 0.28 | 0 | 7.20 | 0.31 | Sample 3 after solventetching by HCl and IPA | 28.77 | 10.32 | 22.18 | 2.34 | 15.55 | 11.48 | 0.34 | 0 | 8.28 | 0.74 |
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Table 2. XPS fitted peak ratios of surface micro-area elements for different samples after different cleaning stepsunit: %