To obtain a cleaner InGaAs material surface, the effects of chemical cleaning methods on the removal of InGaAs surface carbon contaminations and oxides are investigated using the hydrofluoric acid solution, the mixed solution of hydrochloric acid and deionized water, and the mixed solution of hydrochloric acid and isopropanol. On this basis, a method combined with ultraviolet-ozone cleaning is proposed. The InGaAs surfaces cleaned by different methods are analyzed using scanning focused X-ray photoelectron spectroscopy. Moreover, the micro-area characteristics of the surface are obtained with the aid of the secondary electron image produced on the sample surface, and the surface chemical element composition and surface corrosion degree are accurately detected. The analysis discloses that the hydrofluoric acid etching seriously corrodes the sample surface and destroys the surface structure and compositions, in contrast, the etching based on the mixed solution of hydrochloric acid and isopropanol etching combined with ultraviolet-ozone cleaning shows a better cleaning effect and can more effectively remove the surface carbon contaminations and oxides.