[1] R. W. Tkach. Scaling optical communications for the next decade and beyond. Bell Labs Tech. J., 14, 3-9(2010).
[2] G. T. Reed, G. Mashanovich, F. Y. Gardes, D. J. Thomson. Silicon optical modulators. Nat. Photonics, 4, 518-526(2010).
[3] . 200 Gb/s and 400 Gb/s ethernet task force(2016).
[4] S. Kanazawa, T. Fujisawa, K. Takahata, H. Sanjoh, R. Iga, Y. Ueda, W. Kobayashi, H. Ishii. 400-Gb/s operation of flip-chip interconnection EADFB laser array module. Optical Fiber Communications Conference, Tu3I.1(2015).
[5] P. Groumas, V. Katopodis, J. H. Choi, H.-G. Bach, J.-Y. Dupuy, A. Konczykowska, Z. Zhang, P. Harati, E. Miller, A. Beretta, L. Gounaridis, F. Jorge, V. Nodjiadjim, A. Dede, A. Vannucci, G. Cangini, R. Dinu, N. Keil, N. Grote, H. Avramopoulos, C. Kouloumentas. Multi-100 GbE and 400 GbE interfaces for intra-data center networks based on arrayed transceivers with serial 100 Gb/s operation. J. Lightwave Technol., 33, 943-954(2015).
[6] C. Hoessbacher, A. Josten, B. Baeuerle, Y. Fedoryshyn, H. Hettrich, Y. Salamin, W. Heni, C. Haffner, C. Kaiser, R. Schmid, D. L. Elder, D. Hillerkuss, M. Möller, L. R. Dalton, J. Leuthold. Plasmonic modulator with >170 GHz bandwidth demonstrated at 100 GBd NRZ. Opt. Express, 25, 1762-1768(2017).
[7] H. Zwickel, S. Wolf, C. Kieninger, Y. Ku-Tuvantavida, M. Lauermann, T. De keulenaer, A. Vyncke, R. Vaernewyck, J. Luo, A. K.-Y. Jen, W. Freude, J. Bauwelinck, S. Randel, C. Koos. Silicon-organic hybrid (SOH) modulators for intensity-modulation/direct-detection links with line rates of up to 120 Gbit/s. Opt. Express, 25, 23784-23799(2017).
[8] Y. Matsui, T. Pham, W. A. Ling, R. Schatz, G. Carey, H. Daghighian, T. Sudo, C. Roxlo. 55-GHz bandwidth short-cavity distributed reflector laser and its application to 112-Gb/s PAM-4. Optical Fiber Communications Conference, Th5B.4(2016).
[9] M. Streshinsky, A. Novack, R. Ding, Y. Liu, A. E.-J. Lim, P. G.-Q. Lo, T. Baehr-Jones, M. Hochberg. Silicon parallel single mode 48 × 50 Gb/s modulator and photodetector array. J. Lightwave Technol., 32, 4370-4377(2014).
[10] G. Denoyer, A. Chen, B. Park, Y. Zhou, A. Santipo, R. Russo. Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber. 40th European Conference Optical Communication (ECOC), PD.2.4(2014).
[11] D. Patel, S. Ghosh, M. Chagnon, A. Samani, V. Veerasubramanian, M. Osman, D. V. Plant. Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator. Opt. Express, 23, 14263-14287(2015).
[12] X. Xiao, H. Xu, X. Y. Li, Z. Y. Li, T. Chu, Y. D. Yu, J. Z. Yu. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization. Opt. Express, 21, 4116-4125(2013).
[13] L. Chrostowski, M. Hochberg. Silicon Photonics Design: From Devices to Systems(2015).
[14] R. Ding, Y. Liu, Y. Ma, Y. Yang, Q. Li, A. E.-J. Lim, G.-Q. Lo, K. Bergman, T. Baehr-Jones, M. Hochberg. High-speed silicon modulator with slow-wave electrodes and fully independent differential drive. J. Lightwave Technol., 32, 2240-2247(2014).
[15] P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y.-K. Chen. Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters. IEEE J. Sel. Top. Quantum Electron., 20, 150-157(2014).
[16] M. Chagnon, M. Osman, M. Poulin, C. Latrasse, J.-F. Gagné, Y. Painchaud, C. Paquet, S. Lessard, D. V. Plant. Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiP intensity modulator at 1.3 μm. Opt. Express, 22, 21018-21036(2014).
[17] A. Samani, D. Patel, M. Chagnon, E. Elfiky, R. Li, M. Jacques, N. Abadia, V. Veerasubramanian, D. V. Plant. Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator. Opt. Express, 25, 13252-13262(2017).
[18] A. R. Soref, B. R. Bennett. Electro optical effects in silicon. IEEE J. Quantum Electron., 23, 123-129(1987).
[19] R. G. Walker. High-speed III-V semiconductor intensity modulators. IEEE J. Quantum Electron., 27, 654-667(1991).
[20] K. Ogawa, K. Goi, Y. T. Tan, T.-Y. Liow, X. Tu, Q. Fang, G.-Q. Lo, D.-L. Kwong. Silicon Mach-Zehnder modulator of extinction ratio beyond 10 dB at 10.0–12.5 Gbps. Opt. Express, 20, 6163-6169(2012).
[21] P. Dong, L. Chen, Y.-K. Chen. High-speed low-voltage single-drove push-pull silicon Mach-Zehnder modulators. Opt. Express, 19, B26-B31(2011).
[22] Y. Yang, Q. Fang, M. Yu, X. Tu, R. Rusli, G.-Q. Lo. High-efficiency Si optical modulator using Cu travelling-wave electrode. Opt. Express, 22, 29978-29985(2014).
[23] D. Marris-Morini, L. Virot, C. Baudot, J.-M. Fédéli, D. Perez-Galacho, J.-M. Hartmann, S. Olivier, P. Brindel, P. Crozat, F. Boeuf, L. Vivien. A 40 Gbit/s optical link on a 300-mm silicon platform. Opt. Express, 22, 6674-6679(2014).
[24] L. Chen, C. R. Doerr, P. Dong, Y.-K. Chen. Monolithic silicon chip with 10 modulator channels at 25 Gbps and 100-GHz spacing. Opt. Express, 19, B946-B951(2011).
[25] H. Yu, W. Bogaerts. An equivalent circuit model of the traveling wave electrode for carrier-depletion-based silicon optical modulators. J. Lightwave Technol., 30, 1602-1609(2012).
[26] G. Ghione. Semiconductor Devices for High-speed Optoelectronics(2009).
[27] J. Lee, N. Kaneda, T. Pfau, A. Konczykowska, F. Jorge, J. Y. Dupuy, Y. K. Chen. Serial 103.125-Gb/s transmission over 1 km SSMF for low-cost, short-reach optical interconnects. Optical Fiber Communications Conference, Th2A.4(2014).