Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li; Lei Wang; Xiang Li; Xi Xiao; Shaohua Yu

doi:10.1364/PRJ.6.000109

Journals >Photonics Research >Volume 6 >Issue 2 >Page 109 > Article

Photonics Research
Vol. 6, Issue 2, 109 (2018)

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li^1、2、3, Lei Wang^2、3, Xiang Li^2、3, Xi Xiao^2、3、*, and Shaohua Yu^1、2、3

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

²State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, China

³National Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China

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DOI: 10.1364/PRJ.6.000109 Cite this Article Set citation alerts

Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 109 Copy Citation Text

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Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 109

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