Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li; Lei Wang; Xiang Li; Xi Xiao; Shaohua Yu

doi:10.1364/PRJ.6.000109

Journals >Photonics Research >Volume 6 >Issue 2 >Page 109 > Article

Photonics Research
Vol. 6, Issue 2, 109 (2018)

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li^1,2,3, Lei Wang^2,3, Xiang Li^2,3, Xi Xiao^2,3,*, and Shaohua Yu^1,2,3

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

²State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, China

³National Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China

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DOI: 10.1364/PRJ.6.000109 Cite this Article Set citation alerts

Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu, "Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications," Photonics Res. 6, 109 (2018) Copy Citation Text

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Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu, "Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications," Photonics Res. 6, 109 (2018)

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