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    Journals >Journal of Infrared and Millimeter Waves >Volume 43 >Issue 1 >Page 1 > Article
    • Journal of Infrared and Millimeter Waves
    • Vol. 43, Issue 1, 1 (2024)
    High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature
    Yu-Fei QI1、2、5, Wen-Juan WANG2、*, Jing-Hua SUN2、3, Wen WU4, Yan LIANG4, Hui-Dan QU2, Min ZHOU2, and Wei LU1、2、**
    Author Affiliations
  • 1Hangzhou Institute for Advanced Study，University of Chinese Academy of Sciences，Hangzhou 310024，China
  • 2State Key Laboratory of Infrared Physics，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China
  • 3University of Shanghai for Science and Technology，Shanghai 200093，China
  • 4School of Optical-Electrical and Computer Engineering，University of Shanghai for Science and Technology，Shanghai 200093，China
  • 5University of Chinese Academy of Sciences，Beijing 100049，China
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    DOI: 10.11972/j.issn.1001-9014.2024.01.001 Cite this Article
    Yu-Fei QI, Wen-Juan WANG, Jing-Hua SUN, Wen WU, Yan LIANG, Hui-Dan QU, Min ZHOU, Wei LU. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 1 Copy Citation Text show less
    References

    [1] M Vitali, D Bronzi, A J Krmpot et al. A Single-Photon Avalanche Camera for Fluorescence Lifetime Imaging Microscopy and Correlation Spectroscopy. IEEE Journal of Selected Topics in Quantum Electronics, 20, 344-353(2014).

    [2] M A Itzler, U Krishnamachari, M Entwistle et al. Dark Count Statistics in Geiger-Mode Avalanche Photodiode Cameras for 3-D Imaging LADAR. Selected Topics in Quantum Electronics IEEE Journal of, 20, 318-328(2014).

    [3] T Isamu, M Hiroyuki, S Mineki et al. Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems. Sensors, 16, 459(2016).

    [4] X Jiang, M Itzler, K O'Donnell et al. InP-Based Single-Photon Detectors and Geiger-Mode APD Arrays for Quantum Communications Applications. IEEE Journal of Selected Topics in Quantum Electronics, 21, 5-16(2015).

    [5] J Zhang, M A Itzler, H Zbinden et al. Advances in InGaAs/InP single-photon detector systems for quantum communication. 光:科学与应用(英文版)(2015).

    [6] M A I Amp, S Cova. Advances in InGaAsP-based avalanche diode single photon detectors. Journal of Modern Optics, 58, 174-200(2011).

    [7] F Signorelli, F Telesca, E Conca et al. Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications. IEEE Journal of Selected Topics in Quantum Electronics, 1-1(2021).

    [8] B Zhang, S Yin, Y Liu et al. High Performance InGaAs/InP Single-Photon Avalanche Diode Using DBR-Metal Reflector and Backside Micro-Lens. Journal of Lightwave Technology, 40, 3832-3838(2022).

    [9] Y Ma, Y Gu, X Li et al. InGaAsP/InP Geiger-Mode Avalanche Photodiode Towards Sub-kHz Dark Count Rate at 20% Photon Detection Efficiency. Journal of Lightwave Technology, 40, 7364-7374(2022).

    [10] M Zhou, W Wang, H Qu et al. InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency. Optical and Quantum Electronics, 52(2020).

    [11] Hiskett , Philip , A et al. Performance and Design of InGaAs /InP Photodiodes for Single-Photon Counting at 1.55 μm. Applied Optics(2000).

    [12] S H Baek, S C Yang, C Y Park et al. Room temperature quantum key distribution characteristics of low-noise InGaAs/InP single-photon avalanche diode. Journal- Korean Physical Society(2021).

    [13] T He, X Yang, Y Tang et al. High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K. Journal of Semiconductors, 43, 102301(2022).

    [14] J Wen, W J Wang, X R Chen et al. Origin of large dark current increase in InGaAs/InP avalanche photodiode. Journal of Applied Physics, 123, 161530(2018).

    [15] S R Forrest, R F Leheny, R E Nahory et al. In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling. Applied Physics Letters, 37, 322-325(1980).

    [16] V Gopal, S K Singh, R M Mehra. Analysis of dark current contributions in mercury cadmium telluride junction diodes. Infrared Physics & Technology, 43, 317-326(2002).

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    Yu-Fei QI, Wen-Juan WANG, Jing-Hua SUN, Wen WU, Yan LIANG, Hui-Dan QU, Min ZHOU, Wei LU. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 1
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